公开(公告)号：US09606916B2

公开(公告)日：2017-03-28

申请号：US14307994

申请日：2014-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Hyun Lee ,  Jun Hee Yoo ,  Dongsoo Kang ,  Il Park ,  Kiyeon Lee ,  Euicheol Lim

IPC: G06F12/06

CPC classification number: G06F12/0607 ,  Y02D10/13

Abstract: A memory system includes a high-bandwidth memory device, the high-bandwidth memory device having a relatively high operation bandwidth, the high-bandwidth memory device having a plurality of access channels. A low-bandwidth memory device has a relatively low operation bandwidth relative to the high-bandwidth memory device, the low-bandwidth memory device having one or more access channels. An interleaving unit performs a memory interleave operation among the plurality of access channels of the high-bandwidth memory device and an access channel of the one or more access channels of the low-bandwidth memory device.