公开(公告)号：US20230259457A1

公开(公告)日：2023-08-17

申请号：US18302700

申请日：2023-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jusun SONG ,  Kyeonghwan JUNG ,  Jaehoon JEONG ,  Jihun JUNG ,  Changhyeon CHAE ,  Youngho CHOI ,  Jaeook KWON ,  Seokjae JEONG

IPC: G06F12/0871 ,  G06F12/0888 ,  G06F11/14

CPC classification number: G06F12/0871 ,  G06F12/0888 ,  G06F11/1471

Abstract: An electronic apparatus may include a processor configured to store data of a user process related to a user area assigned to a first memory or a system process related to a system area assigned to the first memory in a second memory, in response to a memory recovery event for the first memory, and allow an area of the first memory corresponding to at least one of the user area or the system area to store other data, restore the data stored in the second memory to the first memory, in response to a data restoration event based on an access of a first process to the data stored in the second memory, and perform one of restoration of the data based on the access of the first process and restoration of the data based on an access of the second process and prevent the other one from being performed, in response to identification of the access of the second process during the access of the first process to the data stored in the second memory through the system area.

公开(公告)号：US20240152272A1

公开(公告)日：2024-05-09

申请号：US18417395

申请日：2024-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeonghwan JUNG ,  Jusun SONG ,  Jaehoon JEONG ,  Jihun JUNG ,  Changhyeon CHAE ,  Jaeook KWON ,  Youngho CHOI

IPC: G06F3/06 ,  G06F11/14

CPC classification number: G06F3/0604 ,  G06F3/0652 ,  G06F3/0673 ,  G06F11/1458

Abstract: The electronic apparatus includes: a storage; a memory; and at least one processor, comprising processing circuitry, individually and/or collectively configured to: store data, based on a first file of a rewritable type or a second file of a read-only type stored in the storage, in a first area of the memory, identify a type of a file corresponding to the data stored in the first area of the memory, in response to an event of freeing up space in the memory, delete the data of the first file from the first area, based on the identified type being the rewritable type of the first file, store the data of the second file in a second area of the memory and delete the data of the second file from the first area, based on the identified type being the read-only type of the second file, restore the data of the first file to the first area based on the first file stored in the storage, in response to an event of accessing the data of the first file, and restore the data of the second file stored in the second area to the first area, in response to an event of accessing the data of the second file.

公开(公告)号：US20250086014A1

公开(公告)日：2025-03-13

申请号：US18960949

申请日：2024-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyeon CHAE ,  Kyeonghwan JUNG ,  Jihun JUNG ,  Jaeook KWON ,  Jusun SONG ,  Jaehoon JEONG ,  Youngho CHOI

IPC: G06F9/50 ,  G06F11/34

Abstract: Various embodiments of the present disclosure relate to a memory management method and apparatus which perform a memory return operation by dynamically setting a memory threshold value by additionally considering performance information of an electronic apparatus in addition to an amount of available memory. An electronic apparatus comprises: a memory that stores at least one instruction corresponding to at least one program; and at least one processor, comprising processing circuitry, electrically connected to the memory, wherein at least one processor, individually and/or collectively, is configured to execute the at least one instruction as a process, and to: acquire performance information of the electronic apparatus and an amount of available memory; determine a memory threshold value based on the performance information and the amount of available memory; update a memory threshold value to the determined memory threshold value; and based on the amount of available memory being less than the memory threshold value at a certain point in time, terminate a certain process.

公开(公告)号：US20230409465A1

公开(公告)日：2023-12-21

申请号：US18190350

申请日：2023-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihun JUNG ,  Kyeonghwan JUNG ,  Changhyeon CHAE ,  Jaeook KWON ,  Jusun SONG ,  Jaehoon JEONG ,  Youngho CHOI

IPC: G06F11/36 ,  G06F11/07

CPC classification number: G06F11/3636 ,  G06F11/366 ,  G06F11/076

Abstract: A memory operation device and method for operating a memory in an electronic device. The electronic device may determine whether a memory leak occurs in one or more low-order stack trace items with a count value of n among collected stack trace items, n being a positive integer, and, based on a low-order stack trace item among the collected stack trace items being determined as causing a memory leak, proceeding to a next order of the collected stack trace items to thereby determine whether a memory leak occurs in one or more high-order stack trace items with a count value of m which is a positive integer higher than n). When m is a maximum count value among the collected stack trace items, memory debugging may be performed using a high-order stack trace item, among the one or more high-order stack trace items, causing the memory leak.