公开(公告)号：US20240324240A1

公开(公告)日：2024-09-26

申请号：US18478318

申请日：2023-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjong JEONG ,  Seung Pil KO ,  Kyounghun RYU ,  Byoungjae BAE ,  Kwangil SHIN

IPC: H10B61/00 ,  H10N50/01 ,  H10N50/20

CPC classification number: H10B61/00 ,  H10N50/01 ,  H10N50/20

Abstract: A magnetic memory device may include a substrate, a lower interconnection line on the substrate, a data storage structure on the lower interconnection line, and a lower contact plug between the lower interconnection line and the data storage structure and extended in a first direction perpendicular to a top surface of the substrate to connect the lower interconnection line to the data storage structure. An upper portion of the lower contact plug may have a first width in a second direction parallel to the top surface of the substrate, and a lower portion of the lower contact plug may have a second width in the second direction. The first width may be larger than the second width.