公开(公告)号：US20180358262A1

公开(公告)日：2018-12-13

申请号：US15870175

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Siqing LU ,  Sang-Hoon AHN ,  Xinglong CHEN ,  Ki-Hyun KIM ,  Kyu-In SHIM

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/02 ,  H01L21/311 ,  H01L23/522

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first insulting layer on a substrate, forming a first conductor pattern in the first insulating layer, forming a second insulating layer on the first insulating layer, and forming a second wiring pattern and a contact via in the second insulating layer, wherein a top surface of the first insulating layer is higher than a top surface of the first conductor pattern.