公开(公告)号：US20170018451A1

公开(公告)日：2017-01-19

申请号：US15071228

申请日：2016-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xinglong CHEN ,  Dali LIU ,  Sung-Ho JANG ,  Yong-Ho LIM

IPC: H01L21/687

CPC classification number: H01L21/68728

Abstract: A wafer clamping apparatus, including a plurality of support pins under a wafer, the plurality of pins to support the wafer; and a side clamp at a lateral side of the wafer, the side clamp to directly contact a lateral side of the wafer to press the wafer, the side clamp to press the wafer in a first direction or a second direction, the first direction and the second direction being different directions.

Abstract translation: 一种晶片夹持装置，包括晶片下面的多个支撑销，所述多个销支撑晶片; 以及在所述晶片的横向侧的侧夹具，所述侧夹具直接接触所述晶片的侧面以按压所述晶片，所述侧夹具将所述晶片沿第一方向或第二方向按第一方向和所述第二方向 第二个方向是不同的方向。

公开(公告)号：US20180358262A1

公开(公告)日：2018-12-13

申请号：US15870175

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Siqing LU ,  Sang-Hoon AHN ,  Xinglong CHEN ,  Ki-Hyun KIM ,  Kyu-In SHIM

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/02 ,  H01L21/311 ,  H01L23/522

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first insulting layer on a substrate, forming a first conductor pattern in the first insulating layer, forming a second insulating layer on the first insulating layer, and forming a second wiring pattern and a contact via in the second insulating layer, wherein a top surface of the first insulating layer is higher than a top surface of the first conductor pattern.