公开(公告)号：US20210126014A1

公开(公告)日：2021-04-29

申请号：US16989160

申请日：2020-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINTAE KIM ,  HA-YOUNG KIM ,  SINWOO KIM ,  MOO-GYU BAE ,  JAEHA LEE

IPC: H01L27/11597 ,  H01L27/108

Abstract: Disclosed is a semiconductor device comprising a logic cell that is on a substrate and includes first and second active regions spaced apart from each other in a first direction, first and second active patterns that are respectively on the first and second active regions and extend in a second direction intersecting the first direction, gate electrodes extending in the first direction and running across the first and second active patterns, first connection lines that are in a first interlayer dielectric layer on the gate electrodes and extend parallel to each other in the second direction, and second connection lines that are in a second interlayer dielectric layer on the first interlayer dielectric layer and extend parallel to each other in the first direction.