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公开(公告)号:US20250004028A1
公开(公告)日:2025-01-02
申请号:US18884376
申请日:2024-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC: G01R29/12 , H01L21/66 , H01L21/683 , H01L21/687
Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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公开(公告)号:US20230194591A1
公开(公告)日:2023-06-22
申请号:US17975202
申请日:2022-10-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC: G01R29/12 , H01L21/687 , H01L21/683 , H01L21/66
CPC classification number: G01R29/12 , H01L21/6833 , H01L21/68742 , H01L22/12
Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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公开(公告)号:US12105132B2
公开(公告)日:2024-10-01
申请号:US17975202
申请日:2022-10-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC: G01R29/12 , H01L21/66 , H01L21/683 , H01L21/687
CPC classification number: G01R29/12 , H01L21/6833 , H01L21/68742 , H01L22/12
Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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