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公开(公告)号：US11798788B2
公开(公告)日：2023-10-24
申请号：US17091433
申请日：2020-11-06
发明人： Sang Ki Nam , Sunggil Kang , Sungyong Lim , Beomjin Yoo , Akira Koshiishi , Vasily Pashkovskiy , Kwangyoub Heo
IPC分类号： H01L21/3065 , H01J37/32 , H01J1/02
CPC分类号： H01J37/32596 , H01J1/025 , H01J37/32009 , H01J37/32899
摘要： A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.
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2.发明授权公开(公告)号：US10950414B2
公开(公告)日：2021-03-16
申请号：US15983178
申请日：2018-05-18
发明人： Sang Ki Nam , Akira Koshiishi , Kwangyoub Heo , Sunggil Kang , Beomjin Yoo , Sungyong Lim , Vasily Pashkovskiy
IPC分类号： H01L21/00 , C23C16/00 , H01J37/32 , H01L21/66 , H01L21/3065 , H01L21/683
摘要： Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.
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公开(公告)号：US20240055243A1
公开(公告)日：2024-02-15
申请号：US18124954
申请日：2023-03-22
发明人： Taekjin Kim , Meehyun Lim , Sungyeol Kim , Junbum Park , Sungyoung Yoon , Jinyeong Yun , Jungchul Lee , Sungyong Lim , Sunghwi Cho
IPC分类号： H01J37/32 , H01L21/67 , H01L21/683
CPC分类号： H01J37/32972 , H01L21/67253 , H01L21/67069 , H01L21/6833 , H01J2237/24495
摘要： A semiconductor equipment monitoring apparatus including a wafer-type sensor inside a process chamber and configured to sense a plasma state inside the process chamber; a light detector and analyzer configured to detect and analyze light sensed by the wafer-type sensor; and a light coupler between the wafer-type sensor and the light detector and analyzer and configured to transmit the light sensed by the wafer-type sensor to the light detector and analyzer. The wafer-type sensor includes a plurality of sensors each comprising a passive element.
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公开(公告)号：US20190122867A1
公开(公告)日：2019-04-25
申请号：US15991500
申请日：2018-05-29
发明人： Sang Ki Nam , Sunggil Kang , Sungyong Lim , Beomjin Yoo , Akira Koshiishi , Vasily Pashkovskiy , Kwangyoub Heo
摘要： A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.
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公开(公告)号：US12125687B2
公开(公告)日：2024-10-22
申请号：US17709613
申请日：2022-03-31
发明人： Youngdo Kim , Sungyong Lim , Daewon Kang , Sungyeol Kim , Sangki Nam , Myunggeun Song , Byungkook Cho , Hyeoncheol Jin , Jonghun Pi
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32715 , H01J37/32183 , H01J37/32935 , H01J2237/24564 , H01J2237/3341 , H01L21/6833
摘要： A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.
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6.发明公开公开(公告)号：US20230194591A1
公开(公告)日：2023-06-22
申请号：US17975202
申请日：2022-10-27
发明人： Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC分类号： G01R29/12 , H01L21/687 , H01L21/683 , H01L21/66
CPC分类号： G01R29/12 , H01L21/6833 , H01L21/68742 , H01L22/12
摘要： An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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公开(公告)号：US20230187189A1
公开(公告)日：2023-06-15
申请号：US17864541
申请日：2022-07-14
发明人： Myungsub Jung , Sungyeol Kim , Sungyong Lim , Jaehyun Choi , Kyungmin Lee , Seungkyu Lim
IPC分类号： H01J37/32 , C23C16/52 , C23C16/509
CPC分类号： H01J37/32935 , H01J37/32541 , H01J37/32568 , H01J37/32926 , C23C16/52 , C23C16/509 , H01J2237/24564 , H01J2237/3321 , H01J37/32183
摘要： a plasma processing system includes a chamber providing a space for performing a plasma process on a substrate, a substrate stage having a seating surface for supporting the substrate, the substrate stage having a circular electrode and at least one annular electrode therein, an upper electrode provided over the substrate, a power supply configured to supply source power to the upper electrode, a first capacitance variator configured to vary a capacitance of the circular electrode based on an inputted first control signal, a second capacitance variator configured to vary a capacitance of the annular electrode based on an inputted second control signal, a sensor connected to the first and second capacitance variators respectively and configured to acquire electrical signal data of the circular electrode and the at least one annular electrode, and a controller configured to determine a thin film profile in first and second regions of the substrate corresponding to the circular electrode and the annular electrode respectively based on the electrical signal data obtained from the sensor, the controller being configured to output the first and second control signals respectively in order to obtain a desired thin film profile.
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公开(公告)号：US20230118000A1
公开(公告)日：2023-04-20
申请号：US17970242
申请日：2022-10-20
发明人： Sungyong Lim , Sungyeol Kim , Yongwon Cho , Younghwan Choi , Chunyoon Park , Seungbo Shim , Hyungjung Yong , Jaejoong Lee
IPC分类号： H01J37/32
摘要： A radio frequency (RF) generating device for generating RF output signals is provided. The RF generating device includes: a controller configured to generate an RF control signal and a gain control signal; a plurality of RF signal generators, each RF signal generator being configured to generate an RF signal having at least one of a frequency and a phase determined based on the RF control signal; a plurality of RF amplification modules, each RF amplification module being configured to receive the RF signal generated by a corresponding RF signal generator and generate an RF amplification signal by controlling a gain of the RF signal based on the gain control signal; an RF switch module configured to select at least one of the RF amplification signals generated by the RF amplification modules and generate an RF output signal in a form of a multi-level pulse based on the selected at least one of the RF amplification signals; and an impedance converter connected to an electrode of an external load and configured to convert a load impedance into a target impedance having a target range, the load impedance being an impedance of the external load.
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公开(公告)号：US12105132B2
公开(公告)日：2024-10-01
申请号：US17975202
申请日：2022-10-27
发明人： Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC分类号： G01R29/12 , H01L21/66 , H01L21/683 , H01L21/687
CPC分类号： G01R29/12 , H01L21/6833 , H01L21/68742 , H01L22/12
摘要： An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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公开(公告)号：US20240304420A1
公开(公告)日：2024-09-12
申请号：US18344307
申请日：2023-06-29
发明人： Siyoung Koh , Hadong Jin , Namkyun Kim , Seungbo Shim , Sungyong Lim , Sungyeol Kim
CPC分类号： H01J37/32183 , G01R27/16 , H01J37/32926 , H01J37/32935
摘要： An apparatus for providing radio frequency (RF) power includes a load having a process chamber, a RF power generator configured to provide the RF power through a cable electrically connected to the load, and a reflected power controller configured to detect reflected power from the load in a delivery mode and configured to control the RF power according to the reflected power that was detected.
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