公开(公告)号：US20160147623A1

公开(公告)日：2016-05-26

申请号：US14720934

申请日：2015-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Zhan PING ,  Matteo MONCHIERO

IPC: G06F11/20 ,  G06F11/10 ,  G11C11/408 ,  G06F12/10 ,  G11C7/10

CPC classification number: G06F11/1048 ,  G06F11/1016 ,  G06F11/1666 ,  G06F11/20 ,  G06F12/0292 ,  G06F12/0653 ,  G06F12/1009 ,  G06F2201/82 ,  G06F2201/85 ,  G06F2212/1032 ,  G06F2212/65 ,  G06F2212/70 ,  G11C11/408

Abstract: Embodiments of the inventive concept include a plurality of memory ranks, a buffer chip including a rank remap control section configured to remap a rank from among the plurality of memory ranks of the volatile memory module responsive to a failure of the rank, and a dynamic serial presence detect section configured to dynamically update a stated total capacity of the volatile memory module based at least on the remapped rank. In some embodiments, a memory module includes a plurality of memory ranks, an extra rank in addition to the plurality of memory ranks, the extra rank being a spare rank configured to store a new page corresponding to a failed page from among the plurality of ranks, and a buffer chip including a page remap control section configured to remap the failed page from among the plurality of ranks to the new page in the extra rank.

Abstract translation: 本发明构思的实施例包括多个存储器级别，缓冲器芯片，其包括等级重映射控制部分，其被配置为响应于该级别的故障而从易失性存储器模块的多个存储器级别中重新排列等级，以及动态串行 存在检测部分被配置为至少基于重新映射的秩动态地更新所述易失性存储器模块的所述总容量。 在一些实施例中，存储器模块包括多个存储器级别，除了多个存储器排队之外的额外级别，额外级别是被配置为存储对应于多个级别中的失败页面的新页面的备用级别 以及包括页重新映射控制部分的缓冲器芯片，被配置为将多个等级中的故障页面重新映射到额外等级的新页面。