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公开(公告)号:US09147440B2
公开(公告)日:2015-09-29
申请号:US13945418
申请日:2013-07-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jin-Young Kim , Min-Gu Kang , Jae-Yun Lee , Beak-Hyung Cho
Abstract: A semiconductor memory device includes a plurality of functional bit lines, at least one dummy bit line, and a dummy bit line selection unit. The at least one dummy bit line is adjacent to an outermost bit line of the functional bit lines. The dummy bit line selection unit activates the at least one dummy bit line in response to a selection control signal of one of the plurality of functional bit lines that is not adjacent to the at least one dummy bit line. The semiconductor memory device may ensure a photo margin, so that the pattern size of the functional bit lines can be made uniform.
Abstract translation: 半导体存储器件包括多个功能位线,至少一个虚拟位线和虚拟位线选择单元。 至少一个虚拟位线与功能位线的最外位线相邻。 所述虚拟位线选择单元响应于与所述至少一个虚拟位线不相邻的所述多个功能位线之一的选择控制信号来激活所述至少一个虚拟位线。 半导体存储器件可以确保照相余量,使得功能位线的图案尺寸可以均匀。
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公开(公告)号:US20140022831A1
公开(公告)日:2014-01-23
申请号:US13945418
申请日:2013-07-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jin-Young Kim , Min-Gu Kang , Jae-Yun Lee , Beak-Hyung Cho
IPC: G11C5/06
Abstract: A semiconductor memory device includes a plurality of functional bit lines, at least one dummy bit line, and a dummy bit line selection unit. The at least one dummy bit line is adjacent to an outermost bit line of the functional bit lines. The dummy bit line selection unit activates the at least one dummy bit line in response to a selection control signal of one of the plurality of functional bit lines that is not adjacent to the at least one dummy bit line. The semiconductor memory device may ensure a photo margin, so that the pattern size of the functional bit lines can be made uniform.
Abstract translation: 半导体存储器件包括多个功能位线,至少一个虚拟位线和虚拟位线选择单元。 至少一个虚拟位线与功能位线的最外位线相邻。 所述虚拟位线选择单元响应于与所述至少一个虚拟位线不相邻的所述多个功能位线之一的选择控制信号来激活所述至少一个虚拟位线。 半导体存储器件可以确保照相余量,使得功能位线的图案尺寸可以均匀。
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