公开(公告)号：US20150179787A1

公开(公告)日：2015-06-25

申请号：US14577478

申请日：2014-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin CHO ,  Tae-Joo PARK ,  Dong-Soo LEE ,  Myoung-Jae LEE ,  Seong-ho CHO

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/423 ,  H01L29/20 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/306 ,  H01L29/66795

Abstract: Provided are group III-V semiconductor transistors and methods of manufacturing the same. The method includes forming a group III-V semiconductor channel layer on a substrate, forming a gate insulating layer covering the group III-V semiconductor channel layer, and forming a protection layer including sulfur between the group III-V semiconductor channel layer and the gate insulating layer by annealing the substrate under a sulfur atmosphere.

Abstract translation: 提供III-V族半导体晶体管及其制造方法。 该方法包括在衬底上形成III-V族半导体沟道层，形成覆盖III-V族半导体沟道层的栅极绝缘层，并且在III-V族半导体沟道层和栅极之间形成包含硫的保护层 绝缘层，通过在硫气氛下退火衬底。