公开(公告)号：US20140246643A1

公开(公告)日：2014-09-04

申请号：US14192371

申请日：2014-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-bae KIM ,  Kyung-min KIM ,  Sung-ho KIM ,  Seung-ryul LEE ,  Man CHANG ,  Eun-ju CHO ,  Sae-jin KIM ,  Chang-jung KIM

IPC: H01L27/24

CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146

Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.

Abstract translation: 存储器件可以包括与第一电极间隔开的第一电极和第二电极。 存储器件还可以包括设置在第一电极和第二电极之间的存储元件和设置在第一电极和第二电极之间的开关元件。 开关元件可以被配置为控制对存储器元件的信号访问。 存储器件还可以包括设置在存储器元件和开关元件之间的阻挡层，阻挡层包括绝缘材料。