Abstract:
An electronic apparatus, a method for authorizing multimedia content thereof, and a non-transitory computer-readable recording medium storing therein a program to execute the method are provided. The method for generating multimedia content of the electronic apparatus includes displaying a page screen of electronic book content comprising text and video, receiving a user command to generate a multimedia object in synchronization with the video, and displaying a multimedia object generating window which is movable and size-adjustable within the page screen, and generating the multimedia object in synchronization with the video in response to the user command through the multimedia object generating window and storing the multimedia object in synchronization with the video. As a result, the user is able to author electronic book content comprising interactive multimedia therein.
Abstract:
A method for connecting an external apparatus and a multimedia replaying apparatus using the same. The method includes determining whether a command for displaying menus is input while multimedia content is replayed, determining a multimedia content replay state indicating whether a part or the whole of the multimedia contents is being replayed at an external apparatus if it is determined that the command for displaying menus is input, and displaying the menus comprising the multimedia content replay state on an area displaying a video of the multimedia contents. Therefore, a part or entire of replayed multimedia contents is readily transmitted to an external apparatus for wireless communication.
Abstract:
A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.
Abstract:
Non-volatile memory elements, memory devices including the same, and methods for operating and manufacturing the same may include a memory layer between a first electrode and a second electrode spaced apart from the first electrode. The memory layer may include a first material layer and a second material layer, and may have a resistance change characteristic due to movement of ionic species between the first material layer and the second material layer. At least the first material layer of the first and second material layers may be doped with a metal.
Abstract:
A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.