公开(公告)号：US20210013206A1

公开(公告)日：2021-01-14

申请号：US17038435

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： HeonJong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

公开(公告)号：US20220149043A1

公开(公告)日：2022-05-12

申请号：US17582357

申请日：2022-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heonjong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

公开(公告)号：US20200075595A1

公开(公告)日：2020-03-05

申请号：US16391757

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heonjong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.