公开(公告)号：US20230343782A1

公开(公告)日：2023-10-26

申请号：US18063937

申请日：2022-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin SONG ,  Minchan GWAK ,  Doyoung CHOI

IPC: H01L27/088 ,  H01L23/522 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/66 ,  H01L21/28 ,  H01L21/78 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L23/5226 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/66439 ,  H01L21/28123 ,  H01L21/7806 ,  H01L21/823475 ,  H01L21/823481

Abstract: An integrated circuit device includes a channel area extending in a first horizontal direction, a gate cut structure having a tapered shape in which a horizontal width thereof decreases while extending from a lower side to an upper side in a vertical direction, and a pair of gate electrodes respectively having ends facing each other with the gate cut structure therebetween. The pair of gate electrodes may extend in a second horizontal direction intersecting with the first horizontal direction.

公开(公告)号：US20210013206A1

公开(公告)日：2021-01-14

申请号：US17038435

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： HeonJong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

公开(公告)号：US20220149043A1

公开(公告)日：2022-05-12

申请号：US17582357

申请日：2022-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heonjong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

公开(公告)号：US20200075595A1

公开(公告)日：2020-03-05

申请号：US16391757

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heonjong SHIN ,  Sunghun JUNG ,  Minchan GWAK ,  Yongsik JEONG ,  Sangwon JEE ,  Sora YOU ,  Doohyun LEE

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L23/522 ,  H01L29/417

Abstract: A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

公开(公告)号：US20230115743A1

公开(公告)日：2023-04-13

申请号：US17834987

申请日：2022-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Hyunho PARK ,  Minchan GWAK ,  Seon-Bae KIM ,  Jinyoung PARK

IPC: H01L29/786 ,  H01L29/423

Abstract: A semiconductor device may include first and second active regions on a substrate, first and second active patterns on the first and second active regions, first and second source/drain patterns on the first and second active patterns, first and second silicide patterns on the first and second source/drain patterns, and first and second active contacts coupled to the first and second source/drain patterns. A lowermost portion of the first active contact is at a level higher than that of a lowermost portion of the second active contact. A thickness of the first silicide pattern is greater than that of the second silicide pattern.

公开(公告)号：US20230047343A1

公开(公告)日：2023-02-16

申请号：US17734473

申请日：2022-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Minchan GWAK ,  Seonbae KIM ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L23/535 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device includes active regions extending in a first direction on a substrate; a gate electrode intersecting the active regions on the substrate, extending in a second direction, and including a contact region protruding upwardly; and an interconnection line on the gate electrode and connected to the contact region, wherein the contact region includes a lower region having a first width in the second direction and an upper region located on the lower region and having a second width smaller than the first width in the second direction, and wherein at least one side surface of the contact region in the second direction has a point at which an inclination or a curvature is changed between the lower region and the upper region.

公开(公告)号：US20220399449A1

公开(公告)日：2022-12-15

申请号：US17679361

申请日：2022-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Minchan GWAK

IPC: H01L29/417 ,  H01L29/78 ,  H01L23/522 ,  H01L29/06

Abstract: A semiconductor device includes an active region on a substrate, gate structures intersecting the active region on the substrate, source/drain regions on both sides of the gate structures, a contact structure in a contact hole exposing the source/drain regions, the contact structure comprising a barrier layer and a plug layer, and an insulating pattern in a remaining space of the contact hole, wherein the contact structure includes a first portion filling a lower portion of the contact hole and a second portion protruding from a region of the first portion, the plug layer extends continuously from the first portion to the second portion, and the barrier layer of the second portion has upper ends at a level lower than an upper surface of the plug layer of the second portion on both sides of the plug layer of the second portion.

公开(公告)号：US20220384591A1

公开(公告)日：2022-12-01

申请号：US17546213

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Seon-Bae KIM ,  Minchan GWAK ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, a first lower interconnection line on the gate electrode, and a second lower interconnection line on the active contact and at the same level as the first lower interconnection line. The gate electrode may include an electrode body portion and an electrode protruding portion, wherein the electrode protruding portion protrudes from a top surface of the electrode body portion and is in contact with the first lower interconnection line thereon. The active contact may include a contact body portion and a contact protruding portion, wherein the contact protruding portion protrudes from a top surface of the contact body portion and is in contact with the second lower interconnection line thereon.

公开(公告)号：US20180145082A1

公开(公告)日：2018-05-24

申请号：US15635583

申请日：2017-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungsoo HONG ,  JeongYun LEE ,  GeumJung SEONG ,  HyunHo JUNG ,  Minchan GWAK ,  Kyungseok MIN ,  Youngmook OH ,  Jae-Hoon WOO ,  Bora LIM

IPC: H01L27/11 ,  H01L29/06

CPC classification number: H01L27/1108 ,  H01L21/823821 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0649

Abstract: A semiconductor device includes a first active pattern and a second active pattern on a substrate, a first gate electrode and a second gate electrode respectively across the first active pattern and the second active pattern, a first insulation pattern between and separating the first and second gate electrodes, a gate spacer on a sidewall of the first gate electrode, on a sidewall of the second gate electrode, and on a sidewall of the first insulation pattern, and a second insulation pattern between the gate spacer and the sidewall of the first insulation pattern, wherein the first gate electrode, the first insulation pattern, and the second gate electrode are arranged along a first direction, and wherein the gate spacer extends in the first direction.