公开(公告)号：US20250098170A1

公开(公告)日：2025-03-20

申请号：US18968053

申请日：2024-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin Kim ,  Kyeong Jin Park ,  Seulji Lee ,  Hyejin Lee

IPC: H10B43/27 ,  G11C7/18 ,  H01L23/522 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming a mold structure, in which sacrificial layers and insulating layers are alternately stacked, on a substrate; forming trenches to penetrate the mold structure; forming first sacrificial patterns in the trenches; forming a first supporting layer on the mold structure and the first sacrificial patterns; forming vertical structures to penetrate the first supporting layer and the mold structure; forming a second supporting layer on the first supporting layer and on the vertical structures; forming openings to penetrate the first and second supporting layers and to expose the first sacrificial patterns; removing the first sacrificial patterns through the openings; and replacing the sacrificial layers with electrodes.

公开(公告)号：US20220139952A1

公开(公告)日：2022-05-05

申请号：US17370507

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin Kim ,  Kyeong Jin Park ,  Seulji Lee ,  Hyejin Lee

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  G11C7/18 ,  H01L23/522

Abstract: A semiconductor device is disclosed. The semiconductor device may include gate stacks that are on a substrate, are spaced apart from each other in a first direction, and include electrodes and cell insulating layers alternately stacked, a separation structure between the gate stacks and extending in a second direction crossing the first direction, vertical structures penetrating the gate stacks and having conductive pads on upper portions thereof, a supporting structure on the gate stacks, bit lines on the supporting structure, and contact plugs penetrating the supporting structure and electrically connecting the bit lines to the vertical structures. A bottom surface of a portion of the supporting structure on the separation structure may be lower than top surfaces of the conductive pads.

公开(公告)号：US12171097B2

公开(公告)日：2024-12-17

申请号：US17370507

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin Kim ,  Kyeong Jin Park ,  Seulji Lee ,  Hyejin Lee

IPC: H10B43/27 ,  G11C7/18 ,  H01L23/522 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

Abstract: A semiconductor device is disclosed. The semiconductor device may include gate stacks that are on a substrate, are spaced apart from each other in a first direction, and include electrodes and cell insulating layers alternately stacked, a separation structure between the gate stacks and extending in a second direction crossing the first direction, vertical structures penetrating the gate stacks and having conductive pads on upper portions thereof, a supporting structure on the gate stacks, bit lines on the supporting structure, and contact plugs penetrating the supporting structure and electrically connecting the bit lines to the vertical structures. A bottom surface of a portion of the supporting structure on the separation structure may be lower than top surfaces of the conductive pads.