公开(公告)号：US10566331B1

公开(公告)日：2020-02-18

申请号：US16257913

申请日：2019-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-gil Yang ,  Sang-su Kim ,  Sun-wook Kim ,  Geum-jong Bae ,  Seung-min Song ,  Soo-jin Jeong

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L21/8238 ,  H01L21/02

Abstract: A semiconductor device includes: a fin-type active area extending in a first direction protruding from a substrate; a plurality of nanosheet stacked structures; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.