公开(公告)号：US20230148408A1

公开(公告)日：2023-05-11

申请号：US17982550

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooyong Park ,  Wontaeck Jung ,  Nayeon Kim ,  Jiwon Seo ,  Seungyong Hyun

IPC: G11C16/34 ,  G11C16/08

CPC classification number: G11C16/3459 ,  G11C16/3468 ,  G11C16/08

Abstract: An operation method of a memory device for programming memory cells to a plurality of program states includes providing a series of program pulses to selected memory cells, performing a first verification operation of verifying a target program state among the plurality of program states, performing, when the first verification operation is passed, a second verification operation of detecting fail cells among the selected memory cells to determine if these memory cells have been overprogrammed. When the number of detected fail cells is greater than or equal to a reference value, the program operation may be terminated for that location and the data may be written to another location.