公开(公告)号：US20220091497A1

公开(公告)日：2022-03-24

申请号：US17407425

申请日：2021-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Ho YUN ,  Soo Kyung KIM ,  Jaikyun PARK ,  Donghoon LEE ,  Rankyung JUNG ,  Soonmok HA

IPC: G03F1/24 ,  H01L21/027

Abstract: A reflective mask includes a central region and first and second peripheral regions at opposite sides of the central region, respectively, the first peripheral region including a first out-of-band region having a first edge region extending in a first direction, and a first expansion region between the first edge region and the central region, and a first outer auxiliary region adjacent to the first expansion region of the first out-of-band region in the first direction, the first outer auxiliary region having a first auxiliary pattern region.

公开(公告)号：US20220082926A1

公开(公告)日：2022-03-17

申请号：US17308484

申请日：2021-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soonmok HA ,  Jaehee KIM ,  Sangho YUN ,  Chan HWANG

IPC: G03F1/24

Abstract: An EUV photomask having a main area and a scribe lane area and reflecting EUV light includes a reflective multilayer film and an absorption pattern, wherein the scribe lane area includes first and second lanes, wherein the first lane includes first and second sub-lanes extending in the same direction as an extending direction of the first lane, wherein the first sub-lane includes a first dummy pattern that is a portion of the absorption pattern, and the second sub-lane includes a second dummy pattern that is a portion of the absorption pattern, and when EUV light that is not absorbed by the first and second dummy patterns and is reflected by the reflective multilayer film is irradiated at least twice by overlapping a negative tone photoresist, an amount of light exceeds a threshold dose of light in the negative tone photoresist corresponding to the first lane.