公开(公告)号：US20240120360A1

公开(公告)日：2024-04-11

申请号：US18101578

申请日：2023-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Radwanul Hasan SIDDIQUE ,  Yibing Michelle WANG ,  Mahsa TORFEH ,  Tze-Ching FUNG

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14649

Abstract: A pixel for an image sensor is disclosed that includes a photodiode, a thin-film layer and a reflective layer. The photodiode includes a first side and a second side that is opposite the first side, and receives incident light on the first side. The thin-film layer is formed on the first side of the photodiode and provides a unidirectional phase-shift to light passing from the photodiode to the thin-film layer. The thin-film layer has a refractive index that less than a refractive index of material forming the photodiode. The unidirectional phase-shift may be a unidirectional it phase shift at a target near-infrared light wavelength. The reflective layer is formed on the second side of the photodiode and reflects light passing from the photodiode to the reflective layer toward the first side of the photodiode. The reflective layer may be a thin-film layer, a Distributed Bragg Reflector layer, or a metal.

公开(公告)号：US20250006759A1

公开(公告)日：2025-01-02

申请号：US18739319

申请日：2024-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Radwanul Hasan SIDDIQUE ,  Yibing Michelle WANG ,  Tze-Ching FUNG

IPC: H01L27/146

Abstract: Provided are systems, methods, and apparatuses for non-scattering nanostructures of silicon pixel image sensors. In one or more examples, the systems, devices, and methods include forming a metal layer on a substrate layer of the pixel, the metal layer to reflect electromagnetic radiation incident on the pixel; forming a photodetector on a silicon layer of the pixel, the photodetector to generate photoelectrons based on the electromagnetic radiation; and forming a passivation layer over the silicon layer, the passivation layer including a thin film dielectric. In one or more examples, the systems, devices, and methods include forming a nanostructure on the passivation layer, the nanostructure to allow the electromagnetic radiation to pass through the nanostructure and steer the electromagnetic radiation linearly towards the photodetector, and forming a microlens on the nanostructure, the microlens including at least one of a flat coat layer or a curved lensing layer.

公开(公告)号：US20230217128A1

公开(公告)日：2023-07-06

申请号：US18072689

申请日：2022-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yibing Michelle WANG ,  Chunji WANG ,  Yanhai REN ,  Tze-Ching FUNG ,  Duhyun LEE

IPC: H04N25/713 ,  H04N25/53

CPC classification number: H04N25/713 ,  H04N25/53

Abstract: The present disclosure relates to a method and system for imaging a scene. The method includes generating a shutter pattern and applying the shutter pattern to a photodetector array. The system includes a sensor architecture in three dimensions, where elements of the sensor architecture are stacked in two or more layers. Some elements of the sensor architecture include a photodetector array, register array, a generator to generate shutter patterns, readout circuitry, and an ISP.