公开(公告)号：US09391090B2

公开(公告)日：2016-07-12

申请号：US14804338

申请日：2015-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wanit Manorotkul ,  Joong-han Shin ,  Bong-jin Kuh ,  Han-mei Choi ,  Dmitry Mikulik

IPC: H01L27/115

CPC classification number: H01L27/11575 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/32055 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11582

Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.

Abstract translation: IC器件包括插入在第一级半导体电路和第二级半导体电路之间的多晶硅薄膜，其形成在基板上并且彼此垂直重叠。 多晶硅薄膜包括至少一个硅单晶。 所述至少一个硅单晶包括提供所述第二电平半导体器件的有源区的平坦水平部分和从所述平坦水平部分向所述第一电平半导体器件突出的销状突出部分。

公开(公告)号：US09576969B2

公开(公告)日：2017-02-21

申请号：US15185020

申请日：2016-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wanit Manorotkul ,  Joong-han Shin ,  Bong-jin Kuh ,  Han-mei Choi ,  Dmitry Mikulik

IPC: H01L27/115 ,  H01L21/02 ,  H01L21/3205 ,  H01L23/528

CPC classification number: H01L27/11575 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/32055 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11582

Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.

Abstract translation: IC器件包括插入在第一级半导体电路和第二级半导体电路之间的多晶硅薄膜，其形成在基板上并且彼此垂直重叠。 多晶硅薄膜包括至少一个硅单晶。 所述至少一个硅单晶包括提供所述第二电平半导体器件的有源区的平坦水平部分和从所述平坦水平部分向所述第一电平半导体器件突出的销状突出部分。