公开(公告)号：US20240234417A9

公开(公告)日：2024-07-11

申请号：US18379731

申请日：2023-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeol Hae EOM ,  Byung Ha CHOI ,  Keun Hwi CHO ,  Sung Won KIM ,  Yuri MASUOKA ,  Won Cheol JEONG

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.

公开(公告)号：US20220254881A1

公开(公告)日：2022-08-11

申请号：US17516900

申请日：2021-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hun PARK ,  Won Cheol JEONG ,  Jin Wook KIM ,  Deok Han BAE ,  Myung Yoon UM ,  In Yeal LEE ,  Yoon Young JUNG

IPC: H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

公开(公告)号：US20250133787A1

公开(公告)日：2025-04-24

申请号：US19005034

申请日：2024-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Hun PARK ,  Won Cheol JEONG ,  Jin Wook KIM ,  Deok Han BAE ,  Myung Yoon UM ,  In Yeal LEE ,  Yoon Young JUNG

IPC: H10D62/10 ,  H10D64/01

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

公开(公告)号：US20240136356A1

公开(公告)日：2024-04-25

申请号：US18379731

申请日：2023-10-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeol Hae EOM ,  Byung Ha CHOI ,  Keun Hwi CHO ,  Sung Won KIM ,  Yuri MASUOKA ,  Won Cheol JEONG

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.