公开(公告)号：US20210257474A1

公开(公告)日：2021-08-19

申请号：US17039083

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Yeal LEE ,  Ju Youn KIM ,  Jin-Wook KIM ,  Ju Hun PARK ,  Deok Han BAE ,  Myung Yoon UM

IPC: H01L29/423 ,  H01L23/522 ,  H01L23/528 ,  H01L29/49

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, and a gate contact in the gate structure. The gate structure includes a gate electrode extending in a first direction and a gate capping pattern on the gate electrode. The gate contact is connected to the gate electrode. The gate electrode includes a protrusion extending along a boundary between the gate contact and the gate capping pattern.

公开(公告)号：US20220254881A1

公开(公告)日：2022-08-11

申请号：US17516900

申请日：2021-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hun PARK ,  Won Cheol JEONG ,  Jin Wook KIM ,  Deok Han BAE ,  Myung Yoon UM ,  In Yeal LEE ,  Yoon Young JUNG

IPC: H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

公开(公告)号：US20220336664A1

公开(公告)日：2022-10-20

申请号：US17558967

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han BAE ,  Ju Hun PARK ,  Myung Yoon UM ,  Yu Ri LEE ,  In Yeal LEE

IPC: H01L29/78 ,  H01L29/08

Abstract: A semiconductor device is capable of improving the performance and reliability of a device. The semiconductor device includes a first fin-shaped pattern which extends lengthwise in a first direction, a second fin-shaped pattern which is spaced apart from the first fin-shaped pattern in a second direction and extends lengthwise in the first direction, a first gate electrode extending lengthwise in the second direction on the first fin-shaped pattern, a second gate electrode extending lengthwise in the second direction on the second fin-shaped pattern, a first gate separation structure which separates the first gate electrode and the second gate electrode and is at the same vertical level as the first gate electrode and the second gate electrode, and a first source/drain contact extending lengthwise in the second direction on the first fin-shaped pattern and the second fin-shaped pattern. The first source/drain contact includes a first lower source/drain contact region which intersects the first fin-shaped pattern and the second fin-shaped pattern, and a first upper source/drain contact region which protrudes from the first lower source/drain contact region, and the first upper source/drain contact region does not overlap the first gate separation structure in the first direction.

公开(公告)号：US20250133787A1

公开(公告)日：2025-04-24

申请号：US19005034

申请日：2024-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Hun PARK ,  Won Cheol JEONG ,  Jin Wook KIM ,  Deok Han BAE ,  Myung Yoon UM ,  In Yeal LEE ,  Yoon Young JUNG

IPC: H10D62/10 ,  H10D64/01

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

公开(公告)号：US20220013649A1

公开(公告)日：2022-01-13

申请号：US17185466

申请日：2021-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Yeal LEE ,  Yoon Young JUNG ,  Jin-Wook KIM ,  Deok Han BAE ,  Myung Yoon UM

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/51

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first direction on the substrate, a gate electrode extending in a second direction intersecting the first direction on the active pattern, a gate spacer extending in the second direction along side walls of the gate electrode, an interlayer insulating layer contacting side walls of the gate spacer, a trench formed on the gate electrode in the interlayer insulating layer, a first capping pattern provided along side walls of the trench, at least one side wall of the first capping pattern having an inclined profile, and a second capping pattern provided on the first capping pattern in the trench.