公开(公告)号：US20240405045A1

公开(公告)日：2024-12-05

申请号：US18777300

申请日：2024-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUN SUNG PARK ,  JIN HO KIM ,  YUN KI LEE ,  BUM SUK KIM ,  JUNG-SAENG KIM ,  DONG KYU LEE ,  TAE SUNG LEE

IPC: H01L27/146 ,  H04N25/79

Abstract: An image sensor in which a shading phenomenon is decreased and the quality is increased includes a substrate comprising a first face on which light is incident, and a second face opposite to the first face and a plurality of unit pixels. Each of the plurality of unit pixels includes a photoelectric conversion layer in the substrate. The image sensor further includes a pixel separation pattern which separates unit pixels from the plurality of the unit pixels from each other, a plurality of color filters disposed on the first face of the substrate and arranged in a Bayer pattern, and a grid pattern disposed on the first face of the substrate and interposed within the plurality of color filters. A light-receiving area of the red color filter and a light-receiving area of the blue color filter are smaller than a light-receiving area of the green color filter.

公开(公告)号：US20220262840A1

公开(公告)日：2022-08-18

申请号：US17739640

申请日：2022-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YUN KI LEE ,  JUNG-SAENG KIM ,  HYUNGEUN YOO

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

公开(公告)号：US20230317756A1

公开(公告)日：2023-10-05

申请号：US18125018

申请日：2023-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangin BAE ,  BUMSUK KIM ,  YUN KI LEE ,  Cheon Ho PARK

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a first substrate including pixel regions, each of which comprises a photoelectric conversion region, color filters provided on the pixel regions, respectively, the color filters provided on a first surface of the first substrate, and micro lenses provided on the color filters, respectively. First period structures repeatedly arranged in a first direction are defined by the micro lenses. Each of the first period structures includes a first micro lens and a second micro lens of the micro lenses. At least one of a size, a curvature, a material or a shape of the first micro lens is different from at least one of a size, a curvature, a material or a shape of the second micro lens. A first arrangement period of the first period structures is equal to or greater than twice a pixel pitch of the pixel regions.

公开(公告)号：US20200227455A1

公开(公告)日：2020-07-16

申请号：US16711295

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YUN KI LEE ,  JUNG-SAENG KIM ,  HYUNGEUN YOO

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

公开(公告)号：US20240194713A1

公开(公告)日：2024-06-13

申请号：US18370550

申请日：2023-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangin BAE ,  YUN KI LEE ,  HYEYEON PARK

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14645

Abstract: Disclosed is an image sensor comprising a first substrate including pixel sections each of which includes a photoelectric conversion region; a plurality of color filters on the pixel sections and on a first surface of the first substrate, and a plurality of microlenses on the color filters. An array of the microlenses includes a repetitive periodic structure. The periodic structure includes a first microlens, a second microlens, and a third microlens that are sequentially arranged adjacent to each other along a first direction. A first spacing in the first direction between the first and second microlenses is substantially the same as a second spacing in the first direction between the second and third microlenses. A first pitch in the first direction between the first and second microlenses is different from a second pitch in the first direction between the second and third microlenses.

公开(公告)号：US20200035729A1

公开(公告)日：2020-01-30

申请号：US16400094

申请日：2019-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YUN KI LEE ,  BUMSUK KIM ,  JONGHOON PARK ,  JUNSUNG PARK

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor includes a photoelectric conversion layer including a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements adjacent to the first photoelectric conversion elements. A light shield layer shields the second photoelectric conversion elements and has respective openings therein that provide light transmission to respective ones of the first photoelectric conversion elements. The image sensor further includes an array of micro-lenses on the photoelectric conversion layer, each of the micro-lenses overlapping at least one of the first photoelectric conversion elements and at least one of the second photoelectric conversion elements.