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    IMAGE SENSOR
    2.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230317756A1

    公开(公告)日：2023-10-05

    申请号：US18125018

    申请日：2023-03-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangin BAE ,  BUMSUK KIM ,  YUN KI LEE ,  Cheon Ho PARK

    IPC: H01L27/146

    CPC classification number: H01L27/14627 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464

    Abstract: An image sensor includes a first substrate including pixel regions, each of which comprises a photoelectric conversion region, color filters provided on the pixel regions, respectively, the color filters provided on a first surface of the first substrate, and micro lenses provided on the color filters, respectively. First period structures repeatedly arranged in a first direction are defined by the micro lenses. Each of the first period structures includes a first micro lens and a second micro lens of the micro lenses. At least one of a size, a curvature, a material or a shape of the first micro lens is different from at least one of a size, a curvature, a material or a shape of the second micro lens. A first arrangement period of the first period structures is equal to or greater than twice a pixel pitch of the pixel regions.

    IMAGE SENSOR
    4.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20210183920A1

    公开(公告)日：2021-06-17

    申请号：US16997351

    申请日：2020-08-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： KYUNGHO LEE ,  BUMSUK KIM ,  EUN SUB SHIM

    IPC: H01L27/146

    Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface with a pixel region having photoelectric conversion regions, a gate electrode disposed on the pixel region and adjacent to the first surface, a first isolation structure extending from the first surface toward the second surface, the first isolation structure comprising a first pixel isolation pattern enclosing the pixel region, and a first inner isolation pattern spaced apart from the first pixel isolation pattern and positioned between the photoelectric conversion regions, and a second isolation structure extending from the second surface toward the first surface with a top surface vertically spaced apart from at least a portion of a bottom surface of the first isolation structure. The bottom surface of the first isolation structure is closer to the second surface of the semiconductor substrate than to the first surface thereof.

    IMAGE SENSOR WITH SELECTIVE LIGHT-SHIELDING FOR REFERENCE PIXELS
    5.
    发明申请
    IMAGE SENSOR WITH SELECTIVE LIGHT-SHIELDING FOR REFERENCE PIXELS 审中-公开

    公开(公告)号：US20200035729A1

    公开(公告)日：2020-01-30

    申请号：US16400094

    申请日：2019-05-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： YUN KI LEE ,  BUMSUK KIM ,  JONGHOON PARK ,  JUNSUNG PARK

    IPC: H01L27/146 ,  H04N5/369

    Abstract: An image sensor includes a photoelectric conversion layer including a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements adjacent to the first photoelectric conversion elements. A light shield layer shields the second photoelectric conversion elements and has respective openings therein that provide light transmission to respective ones of the first photoelectric conversion elements. The image sensor further includes an array of micro-lenses on the photoelectric conversion layer, each of the micro-lenses overlapping at least one of the first photoelectric conversion elements and at least one of the second photoelectric conversion elements.

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