METHOD AND DEVICE FOR COMMUNICATION IN NARROW BAND SYSTEM

    公开(公告)号:US20180206253A1

    公开(公告)日:2018-07-19

    申请号:US15744526

    申请日:2016-07-22

    Abstract: The present disclosure relates to a communication technique for converging a 5G communication system, which is provided to support a higher data transmission rate beyond a 4G system with an IoT technology, and a system therefor. The present disclosure may be applied to an intelligent service (for example, smart home, smart building, smart city, smart car or connected car, healthcare, digital education, retail business, security and safety-related service, etc.) on the basis of a 5G communication technology and an IoT-related technology. The present disclosure relates to an efficient method and device for uplink communication in a narrow band system which provides an IoT service in a band for a broadband system, and a method for uplink communication in a narrow band system according to an embodiment of the present disclosure comprises the steps of: receiving, by a terminal, control information associated with uplink transmission of symbols from a base station; and performing, by the terminal, the uplink transmission using symbols except a second symbol overlapping with a first symbol for transmission of an uplink reference signal in a broadband system, on the basis of the control information.

    SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING DISABLE OPERATION USING ANTI-FUSE AND METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING DISABLE OPERATION USING ANTI-FUSE AND METHOD THEREOF 审中-公开
    使用防熔丝执行禁用操作的半导体存储器件及其方法

    公开(公告)号:US20140241085A1

    公开(公告)日:2014-08-28

    申请号:US14076401

    申请日:2013-11-11

    CPC classification number: G11C29/04 G11C17/16 G11C2029/4402

    Abstract: A semiconductor memory device for performing a disable operation using an anti-fuse, and method thereof are provided. The semiconductor memory device according to an example embodiment includes a fuse circuit including at least one anti-fuse configured to store fuse data, a memory circuit configured to at least one of read data stored in a memory cell and write data to the memory cell and a fuse controller configured to disable a read/write operation of the memory circuit based on the fuse data.

    Abstract translation: 提供了一种使用反熔丝执行禁止操作的半导体存储器件及其方法。 根据示例实施例的半导体存储器件包括:熔丝电路,其包括被配置为存储熔丝数据的至少一个反熔丝;存储器电路,被配置为存储在存储单元中的读取数据中的至少一个,并将数据写入存储器单元; 熔丝控制器,被配置为基于所述熔丝数据来禁止所述存储器电路的读/写操作。

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