公开(公告)号：US20180123064A1

公开(公告)日：2018-05-03

申请号：US15784733

申请日：2017-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong Choi ,  Joo Young Kim ,  Youngjun Yun ,  Yong-Uk Lee ,  Jiyoung Jung

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0533 ,  H01L51/0002 ,  H01L51/0004 ,  H01L51/0545

Abstract: A method of manufacturing an organic thin film transistor includes forming a gate insulating layer on a gate electrode, forming a mold on the gate insulating layer, the mold including a void, forming a self-assembled layer from a self-assembled layer precursor in the void of the mold, removing the mold, and forming an organic semiconductor on the gate insulating layer.