公开(公告)号：US20180052136A1

公开(公告)日：2018-02-22

申请号：US15676617

申请日：2017-08-14

申请人： The Board of Trustees of the University of Illinois

发明人： Ying DIAO ,  Fengjiao ZHANG

IPC分类号： G01N27/414 ,  H01L51/05 ,  H01L51/00 ,  G01N33/00 ,  G01N33/497

CPC分类号： G01N27/4141 ,  G01N27/4146 ,  G01N33/0047 ,  G01N33/0054 ,  G01N33/497 ,  G01N2033/4975 ,  H01L51/0014 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0071 ,  H01L51/0074 ,  H01L51/0096 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0562 ,  Y02A50/246

摘要： The present disclosure provides a method of fabricating a nanoporous thin film device comprising depositing a template on a substrate to form a nanoporous insulating layer, the template comprising one or more polymers capable of forming pores when polymerized and at least one cross-linking agent, and depositing a second layer (e.g. organic semiconductor, semiconductor, insulator) on the nanopourous insulating layer to form a thin film having a plurality of isolated nanopores on the surface. Nanoporous semiconductor thin films made by these methods is provided. Sensors and devices comprising the nanoporous thin film is also disclosed.

公开(公告)号：US09748506B1

公开(公告)日：2017-08-29

申请号：US15340499

申请日：2016-11-01

申请人： James T. Kelliher ,  Monica P. Lilly ,  Robert S. Howell ,  Wayne Stephen Miller ,  Patrick B. Shea ,  Matthew J. Walker ,  William J. Sweet

发明人： James T. Kelliher ,  Monica P. Lilly ,  Robert S. Howell ,  Wayne Stephen Miller ,  Patrick B. Shea ,  Matthew J. Walker ,  William J. Sweet

IPC分类号： H01L29/76 ,  H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0533 ,  H01L51/0048 ,  H01L51/0566

摘要： One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.

公开(公告)号：US20170200895A1

公开(公告)日：2017-07-13

申请号：US15401035

申请日：2017-01-08

申请人： Hong Kong Baptist University

发明人： Beng Soon Ong ,  Yanlian Lei

IPC分类号： H01L51/00 ,  C09D5/24 ,  C09D11/52 ,  C09D11/102 ,  C09D11/108 ,  C09D123/06 ,  C09D165/00 ,  C09D133/12 ,  C09D11/107 ,  C09D11/106 ,  C09D127/06 ,  C09D133/20 ,  C09D125/06

CPC分类号： H01L51/0036 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/212 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/334 ,  C08G2261/344 ,  C08G2261/364 ,  C08G2261/51 ,  C08G2261/92 ,  C09D5/24 ,  C09D7/65 ,  C09D11/106 ,  C09D11/107 ,  C09D11/108 ,  C09D11/12 ,  C09D11/52 ,  C09D123/06 ,  C09D125/06 ,  C09D127/06 ,  C09D133/12 ,  C09D133/20 ,  C09D165/00 ,  H01L51/0003 ,  H01L51/0004 ,  H01L51/0026 ,  H01L51/0035 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0053 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0566 ,  C08L65/00 ,  C08L27/06 ,  C08L33/06 ,  C08L33/20 ,  C08L33/12 ,  C08L23/06

摘要： The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.

公开(公告)号：US09525071B2

公开(公告)日：2016-12-20

申请号：US14380270

申请日：2013-02-22

申请人： Melissa Alyson Smith ,  Akintunde I. Akinwande

发明人： Melissa Alyson Smith ,  Akintunde I. Akinwande

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L29/76 ,  H01L29/40 ,  H01L29/786 ,  H01L51/10 ,  B81B3/00 ,  H01L29/49 ,  H01L29/51 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L29/78663 ,  B81B3/0086 ,  B81B2207/015 ,  H01L29/4908 ,  H01L29/51 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0097 ,  H01L51/0533 ,  H01L51/10 ,  Y02E10/549

摘要： A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.

摘要翻译： 柔性高压薄膜晶体管包括栅电极，源电极，漏电极，电介质层和柔性半导体层。 柔性半导体层用作晶体管的沟道，并与源电极和漏电极电连通。 漏电极与栅电极横向偏移。 电介质层相对于晶体管的其他元件配置和布置，使得晶体管稳定可操作以便利用相对小的控制栅极电压来切换相对高的漏极电压。

公开(公告)号：US20160035855A1

公开(公告)日：2016-02-04

申请号：US13111699

申请日：2011-05-19

申请人： Tobin J. Marks ,  Young-geun Ha ,  Antonio Facchetti

发明人： Tobin J. Marks ,  Young-geun Ha ,  Antonio Facchetti

IPC分类号： H01L29/51 ,  H01L51/05 ,  H01L29/786

CPC分类号： H01L51/0533 ,  H01L21/441 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L51/0053 ,  H01L51/0055 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0545 ,  H01L2251/301

摘要： Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.

摘要翻译： 公开了可用作电绝缘（或电介质）材料的有机 - 无机混合自组装多层膜。 这些多层通常包括无机底漆层和沉积在其上的一个或多个双层。 每个双层包括发色团或“＆pgr可极化”层和由氧化锆组成的无机覆盖层。 由于双层结构的规则性和由自组装过程产生的发色团的排列取向，所以本发明的多层膜可用于诸如薄膜晶体管的电子器件，以及非线性光学和非易失性存储器中。

公开(公告)号：US09133130B2

公开(公告)日：2015-09-15

申请号：US13080564

申请日：2011-04-05

申请人： Peng Wei ,  Zhenan Bao

发明人： Peng Wei ,  Zhenan Bao

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/52 ,  C07D235/18 ,  B82Y10/00 ,  B82Y30/00 ,  C07D409/04 ,  C07D409/14

CPC分类号： C07D235/18 ,  B82Y10/00 ,  B82Y30/00 ,  C07D409/04 ,  C07D409/14 ,  H01L51/0047 ,  H01L51/0048 ,  H01L51/005 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/0566 ,  H01L51/5004 ,  H01L51/5296 ,  Y02E10/549 ,  Y02P70/521

摘要： In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below −2.5 eV to effect such n-type doping.

摘要翻译： 根据各种实施方案，有机电子器件包括n型掺杂剂材料，其包括在氮原子之间键合有氢基材料的咪唑类材料。 n型掺杂剂材料掺杂有机材料，并且可以用于减轻由于诸如暴露于环境大气的条件而导致的迁移率的降低，这可能导致电荷传输的不期望的减少。 其他实施方案涉及具有这种类型的n型掺杂剂的碳纳米管或石墨烯结构，其中碳纳米管或石墨烯结构的费米能级低于-2.5eV以实现这种n型掺杂。

公开(公告)号：US09112161B2

公开(公告)日：2015-08-18

申请号：US13499279

申请日：2012-02-08

申请人： Hoi Chang Yang ,  Mi Jang

发明人： Hoi Chang Yang ,  Mi Jang

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0533 ,  C08G2261/3223 ,  C08G2261/92 ,  H01L51/0053 ,  H01L51/0094 ,  H01L51/0529 ,  H01L51/0545 ,  Y10T428/265 ,  Y10T428/3154 ,  Y10T428/31663 ,  Y10T428/31725 ,  Y10T428/31786 ,  Y10T428/31935

摘要： The present invention relates to a hybrid layer including an oxide layer or organic layer, and organic polymer layer, an insulating layer including the hybrid layer, and an electronic device such as an organic field-effect transistor. A hybrid layer according to the present invention may include an oxide layer or an organic layer, and an organic polymer layer chemically combined with the oxide layer or the organic layer.

摘要翻译： 本发明涉及包括氧化物层或有机层，有机聚合物层，包括混合层的绝缘层和诸如有机场效应晶体管的电子器件的混合层。 根据本发明的混合层可以包括氧化物层或有机层，以及与氧化物层或有机层化学结合的有机聚合物层。

公开(公告)号：US20150194620A1

公开(公告)日：2015-07-09

申请号：US14421665

申请日：2013-08-12

申请人： Commissariat a l'Energie Atomique et aux Energies Alternatives

发明人： Mohammed Benwadih ,  Olivier Poncelet

IPC分类号： H01L51/10 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/107 ,  H01L51/0001 ,  H01L51/0508 ,  H01L51/0533

摘要： The invention concerns a treatment method to make a surface of a layer made from a fluorinated material hydrophilic, a method for depositing a layer made from a metal or semi-conductive layer on the surface of a layer made from a fluorinated material, and a device comprising a layer made from a fluorinated material of which one surface has been treated by the treatment method of the invention, and a layer made from a metal material. The method of the invention comprises a step a) of depositing a layer of an oxo-hydroxide of an element from the alkaline earth metal group or from group II or III of the periodic table or of a rare earth or of a mixture of same, onto said surface. The method of the invention is applicable in the field of electronics, in particular.

摘要翻译： 本发明涉及一种使由氟化材料制成的层的表面亲水化的处理方法，在由氟化材料制成的层的表面上沉积由金属或半导电层制成的层的方法和装置 包括由通过本发明的处理方法处理了一个表面的氟化材料制成的层和由金属材料制成的层。 本发明的方法包括以下步骤：a）从元素周期表的碱土金属组或II或III族中稀土元素或其混合物沉积元素的氧代氢氧化物层， 到所述表面上。 本发明的方法尤其适用于电子领域。

公开(公告)号：US20150144930A1

公开(公告)日：2015-05-28

申请号：US14608798

申请日：2015-01-29

申请人： Samsung Display Co., Ltd.

发明人： Jin-Kwang Kim ,  Sang-Joon Seo ,  Seung-Hun Kim ,  Seongmin Wang

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L51/5256 ,  H01L21/02365 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/471 ,  H01L23/3192 ,  H01L27/3246 ,  H01L51/0533 ,  H01L51/50 ,  H01L51/5064 ,  H01L51/508 ,  H01L51/5253

摘要： An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the metal oxide layer and covering a relatively larger area than the metal oxide layer; a first organic layer formed on the first inorganic layer and covering a relatively smaller area than the first inorganic layer; and a second inorganic layer formed on the first organic layer, covering a relatively larger area than the first organic layer, and contacting the first inorganic layer at an edge of the second inorganic layer.

摘要翻译： 有机发光二极管（OLED）显示器包括：基板; 形成在所述基板上的有机发光二极管; 形成在所述基板上并覆盖所述有机发光二极管的金属氧化物层; 形成在所述金属氧化物层上并覆盖比所述金属氧化物层相对较大面积的第一无机层; 形成在所述第一无机层上并覆盖比所述第一无机层相对较小的区域的第一有机层; 以及形成在所述第一有机层上的第二无机层，其覆盖比所述第一有机层相对更大的面积，并且在所述第二无机层的边缘处与所述第一无机层接触。

公开(公告)号：US08921867B2

公开(公告)日：2014-12-30

申请号：US14130940

申请日：2013-06-05

申请人： Panasonic Corporation

发明人： Yuko Okumoto ,  Akihito Miyamoto

IPC分类号： H01L29/00 ,  H01L51/00 ,  H01L21/00 ,  H01L21/332 ,  H01L51/40 ,  H01L51/05 ,  H01L29/786 ,  H01L27/32

CPC分类号： H01L51/0529 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/786 ,  H01L51/0004 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2251/5315

摘要： A thin-film transistor including: a gate electrode that is located above a substrate; a gate insulating layer that faces the gate electrode; a partition that defines an opening and has higher liquid repellency than liquid repellency of the gate insulating layer, the opening having a surface of the gate insulating layer therewithin; a semiconductor layer that faces the gate electrode with the gate insulating layer interposed therebetween and is formed within the opening by an application method; a source electrode and a drain electrode that are electrically connected to the semiconductor layer; and an intermediate layer that is made of the same material as a material of the partition and is located between the gate insulating layer and the semiconductor layer, wherein the intermediate layer is discretely present above the gate insulating layer.

摘要翻译： 1.一种薄膜晶体管，包括：位于基板上方的栅电极; 面对栅电极的栅极绝缘层; 限定开口并具有比栅极绝缘层的液体排斥性更高的液体排斥性的隔板，该开口具有栅极绝缘层的表面; 面向栅电极的半导体层，其间具有栅极绝缘层，并通过施加方法形成在开口内; 源电极和漏电极，其电连接到所述半导体层; 以及由与所述隔板的材料相同的材料制成并且位于所述栅极绝缘层和所述半导体层之间的中间层，其中所述中间层离散地存在于所述栅极绝缘层的上方。