公开(公告)号：US12288788B2

公开(公告)日：2025-04-29

申请号：US17410326

申请日：2021-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inyeal Lee ,  Jinwook Kim ,  Dongbeen Kim ,  Deokhan Bae ,  Junghoon Seo ,  Myungyoon Um ,  Jongmil Youn ,  Yonggi Jeong

IPC: H01L27/088 ,  H01L23/50

Abstract: An integrated circuit device includes substrate including a fin-type active area extending on the substrate in a first direction parallel to an upper surface of the substrate, a first gate line crossing the fin-type active area on the substrate and extending in a second direction perpendicular to the first direction, a cut gate line extending in the second direction and being spaced apart from the first gate line with a first gate cut area therebetween, a second gate line extending in the second direction and being spaced apart from the cut gate line with a second gate cut area therebetween, and a power wiring disposed on the cut gate line.