公开(公告)号：US20190115358A1

公开(公告)日：2019-04-18

申请号：US15949195

申请日：2018-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-suk LEE ,  Tae-hee LEE

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/1157 ,  H01L27/11565 ,  H01L23/522 ,  H01L23/528 ,  H01L23/00 ,  H01L21/768

CPC classification number: H01L27/11582 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/562 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575

Abstract: A semiconductor device including: a substrate including a top surface configured to extend in a first direction and a second direction that are perpendicular to each other; gate stack structures disposed on the substrate, spaced apart from one another in the first direction and configured to extend in the second direction; a first region in which levels of top surfaces of the gate stack structures are constant; a second region in which levels of top surfaces of the gate stack structures are stepped, the second region configured to surround at least a portion of the first region; and conductive lines disposed in the second region between the gate stack structures and configured to extend in the second direction in an uneven form.