公开(公告)号：US20150130005A1

公开(公告)日：2015-05-14

申请号：US14465062

申请日：2014-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： JeongWook KO ,  Hongki KIM ,  Younghoon PARK ,  Wonje PARK ,  Yu Jin AHN ,  Junetaeg LEE

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14687 ,  H04N5/374 ,  H04N5/378

Abstract: Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.

Abstract translation: 示例性实施例公开了图像传感器及其制造方法。 图像传感器可以包括具有光接收区域和遮光区域的半导体层，所述半导体层包括光电转换装置，半导体层表面上的阻光层，半导体层上的滤色器和 遮光层和滤镜上的微透镜。 滤光器不在光接收区域和遮光区域之间的界面区域中。