公开(公告)号：US20220359596A1

公开(公告)日：2022-11-10

申请号：US17719836

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doojin KIM ,  Junetaeg LEE ,  Sungkwan Kim ,  Seokha LEE

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a substrate including a pixel array zone; a microlens layer on the substrate in the pixel array zone; a first passivation layer on the microlens layer; and a second passivation layer on the first passivation layer, wherein the microlens layer includes: a first lens pattern; a second lens pattern at a side of the first lens pattern; and a first point where the first lens pattern meets the second lens pattern, and at least one of the first passivation layer and the second passivation layer is on the first lens pattern, the second lens pattern, and the first point.

公开(公告)号：US20150130005A1

公开(公告)日：2015-05-14

申请号：US14465062

申请日：2014-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： JeongWook KO ,  Hongki KIM ,  Younghoon PARK ,  Wonje PARK ,  Yu Jin AHN ,  Junetaeg LEE

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14687 ,  H04N5/374 ,  H04N5/378

Abstract: Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.

Abstract translation: 示例性实施例公开了图像传感器及其制造方法。 图像传感器可以包括具有光接收区域和遮光区域的半导体层，所述半导体层包括光电转换装置，半导体层表面上的阻光层，半导体层上的滤色器和 遮光层和滤镜上的微透镜。 滤光器不在光接收区域和遮光区域之间的界面区域中。

公开(公告)号：US20220109020A1

公开(公告)日：2022-04-07

申请号：US17323449

申请日：2021-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin LEE ,  Junetaeg LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor includes a substrate that has a first pixel region and a second pixel region and a microlens layer on a first surface of the substrate. The microlens layer includes a first lens pattern on the first pixel region of the substrate; and a second lens pattern on the second pixel region of the substrate. A width of the first pixel region is greater than a width of the second pixel region, and a height of the first lens pattern is greater than a height of the second lens pattern.

公开(公告)号：US20170040374A1

公开(公告)日：2017-02-09

申请号：US15229265

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeseok OH ,  Junetaeg LEE ,  Seung-Hun SHIN ,  Jaesang YOO

IPC: H01L27/146 ,  H01L23/528 ,  H01L23/522 ,  H01L23/48

CPC classification number: H01L27/14636 ,  H01L21/187 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L25/0657 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469

Abstract: A semiconductor device includes a substrate, a circuit layer formed on a first surface of the substrate and including a via pad and an interlayer insulating layer covering the via pad, a via structure configured to fully pass through the substrate, partially pass through the interlayer insulating layer and be in contact with the via pad, a via isolation insulating layer configured to pass through the substrate and be spaced apart from outer side surfaces of the via structure in a horizontal direction and a pad structure buried in the substrate and exposed on a second surface of the substrate opposite the first surface of the substrate.

Abstract translation: 半导体器件包括衬底，形成在衬底的第一表面上并包括通孔焊盘和覆盖通孔焊盘的层间绝缘层的电路层，构造成完全通过衬底的通孔结构，部分地穿过层间绝缘层 层，并且与通孔焊盘接触;通孔隔离绝缘层，被配置为穿过基板并且在水平方向上与通孔结构的外侧表面间隔开，并且衬垫结构被埋在基板中并暴露在第二 衬底的与衬底的第一表面相对的表面。