公开(公告)号：US10984876B2

公开(公告)日：2021-04-20

申请号：US16445367

申请日：2019-06-19

Applicant: SanDisk Technologies LLC

Inventor： Piyush Dak ,  Mohan Dunga ,  Chao Qin ,  Muhammad Masuduzzaman ,  Xiang Yang

IPC: G11C16/34 ,  G11C16/32 ,  G11C16/26 ,  G11C16/10

Abstract: Various methods include receiving, by a controller, a temperature reading of a memory array, the temperature reading includes a temperature value; determining the temperature value is below a first threshold; in response, modifying a duration of a verify cycle of a write operation to create a modified verify cycle; then programming a first data into the memory array using the write operation that uses the modified verify cycle. Methods additionally include receiving a second temperature reading of the memory array, the second temperature reading includes a second temperature value; determining the second temperature value is below a second threshold, in response, decreasing the duration of a verify cycle of a verify cycle to create a second verify cycle, where the second verify cycle is shorter than the modified verify cycle; and then programming a second data into the memory array using the write operation that uses the second verify cycle.