公开(公告)号：US10984883B1

公开(公告)日：2021-04-20

申请号：US16728447

申请日：2019-12-27

Applicant: SanDisk Technologies LLC

Inventor： Sowjanya Tungala ,  Sini Balakrishnan ,  Sowjanya Sunkavelli ,  Sridhar Yadala ,  Dat Tran ,  Loc Tu ,  Kirubakaran Periyannan

IPC: G11C29/44 ,  G11C29/00 ,  G11C29/18

Abstract: A memory management method includes identifying memory segments of a memory device. The method also includes identifying, for each memory segment, a number of faulty columns and determining a total number of faulty columns for the memory device. The method also includes, in response to a determination that the total number of faulty columns is greater than a threshold, identifying a memory segment having a highest number of faulty columns. The method also includes disabling the memory segment. Another method includes identifying, for each memory segment, a number of faulty memory blocks and determining a total number of faulty memory blocks. The method also includes, in response to a determination that the total number of faulty memory blocks is greater than a threshold, identifying a memory segment having a highest number of faulty memory blocks. The method also includes disabling the memory segment.