公开(公告)号：US11031059B2

公开(公告)日：2021-06-08

申请号：US16281699

申请日：2019-02-21

Applicant: SanDisk Technologies LLC

Inventor： Christopher J. Petti ,  Tz-Yi Liu ,  Ali Al-Shamma ,  Yoocharn Jeon

IPC: G11C11/16 ,  H01L27/22

Abstract: Magnetic random-access memory (MRAM) circuits are provided herein. In one example implementation, an MRAM circuit includes control circuitry coupled to a magnetic tunnel junction (MTJ) element in series with a selector element. This control circuitry is configured to adjust current through the selector element when the selector element is in a conductive state. The circuit also includes a compensation circuitry configured to compensate for a offset voltage across the selector element in the conductive state based on adjustments to the current through the selector element. An output circuit is also configured to report a magnetization state of the MTJ element.

公开(公告)号：US11049559B1

公开(公告)日：2021-06-29

申请号：US16899423

申请日：2020-06-11

Applicant: SanDisk Technologies LLC

Inventor： Yoocharn Jeon

IPC: G11C13/00

Abstract: Apparatuses and techniques are described for forming of selectors in a memory device such as a crosspoint memory array. A threshold switching selector is in series with a resistance-switching memory cell in a storage node. Prior to a first switching operation in the array, a stimulus is applied to the storage node to transform the selectors from an initial state having an initial threshold voltage to an operating state having a lower, operating threshold voltage. The stimulus can include a signal having a voltage which does not exceed the operating threshold voltage. To limit peak current consumption, the stimulus can be applied to different subsets of the array, one subset at a time.

公开(公告)号：US20200273512A1

公开(公告)日：2020-08-27

申请号：US16281699

申请日：2019-02-21

Applicant: SanDisk Technologies LLC

Inventor： Christopher J. Petti ,  Tz-Yi Liu ,  Ali Al-Shamma ,  Yoocharn Jeon

IPC: G11C11/16 ,  H01L27/22

Abstract: Magnetic random-access memory (MRAM) circuits are provided herein. In one example implementation, an MRAM circuit includes control circuitry coupled to a magnetic tunnel junction (MTJ) element in series with a selector element. This control circuitry is configured to adjust current through the selector element when the selector element is in a conductive state. The circuit also includes a compensation circuitry configured to compensate for a offset voltage across the selector element in the conductive state based on adjustments to the current through the selector element. An output circuit is also configured to report a magnetization state of the MTJ element.