公开(公告)号：US11139022B1

公开(公告)日：2021-10-05

申请号：US16908467

申请日：2020-06-22

Applicant: SanDisk Technologies LLC

Inventor： Kou Tei ,  Ohwon Kwon ,  Jongyeon Kim ,  Chia-Kai Chou ,  Yuedan Li

IPC: G11C7/02 ,  G11C11/4091 ,  G11C11/4074 ,  G11C5/02 ,  G11C11/4096 ,  G11C11/4076

Abstract: An example of an apparatus includes a plurality of memory cells arranged in a plurality of NAND strings that are connected to a source line and a control circuit connected to the source line. The control circuit is configured to provide a first current to the source line to pre-charge the source line to a target voltage for sensing data states of the plurality of memory cells and provide a second current to the source line to return the source line to the target voltage in a recovery period between sensing data states. The control circuit is configured to provide the second current at any one of a plurality of current levels.