公开(公告)号：US20100039119A1

公开(公告)日：2010-02-18

申请号：US12604356

申请日：2009-10-22

申请人： Sang-Kyoung LEE ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung LEE ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： G01R31/04

CPC分类号： G02F1/1362 ,  G02F2001/136254

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

摘要翻译： 在绝缘基板上沿水平方向形成多条栅极线，在垂直方向形成与数据线连接的栅极短路棒，并在其上形成栅极绝缘膜。 在栅极绝缘膜上沿垂直方向形成与栅极线相交的多条数据线，并且在显示区域的外侧形成与数据线连接的数据短路条。 第一短路棒形成在栅极绝缘膜上，位于栅极线和栅极短路棒之间，并连接到奇数栅极线。 第二二次短路棒平行于第一短路棒形成并连接到偶数栅极线。

公开(公告)号：US07446556B2

公开(公告)日：2008-11-04

申请号：US11492291

申请日：2006-07-24

申请人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： G01R31/00

CPC分类号： G02F1/1362 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136254 ,  G09G3/006 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2330/08

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

摘要翻译： 在绝缘基板上沿水平方向形成多条栅极线，在垂直方向形成与数据线连接的栅极短路棒，并在其上形成栅极绝缘膜。 在栅极绝缘膜上沿垂直方向形成与栅极线相交的多条数据线，并且在显示区域的外侧形成与数据线连接的数据短路条。 第一短路棒形成在栅极绝缘膜上，位于栅极线和栅极短路棒之间，并连接到奇数栅极线。 第二二次短路棒平行于第一短路棒形成并连接到偶数栅极线。

公开(公告)号：US06734925B1

公开(公告)日：2004-05-11

申请号：US09206317

申请日：1998-12-07

申请人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： G02F11333

CPC分类号： G02F1/1362 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136254 ,  G09G3/006 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2330/08

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

公开(公告)号：US07081770B2

公开(公告)日：2006-07-25

申请号：US11272735

申请日：2005-11-15

申请人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： G01R31/00

CPC分类号： G02F1/1362 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136254 ,  G09G3/006 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2330/08

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

公开(公告)号：US20090039348A1

公开(公告)日：2009-02-12

申请号：US12250397

申请日：2008-10-13

申请人： Sang-Kyoung LEE ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung LEE ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： H01L23/58

CPC分类号： G02F1/1362 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136254 ,  G09G3/006 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2330/08

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

摘要翻译： 在绝缘基板上沿水平方向形成多条栅极线，在垂直方向形成与数据线连接的栅极短路棒，并在其上形成栅极绝缘膜。 在栅极绝缘膜上沿垂直方向形成与栅极线相交的多条数据线，并且在显示区域的外侧形成与数据线连接的数据短路条。 第一短路棒形成在栅极绝缘膜上，位于栅极线和栅极短路棒之间，并连接到奇数栅极线。 第二二次短路棒平行于第一短路棒形成并连接到偶数栅极线。

公开(公告)号：US20060261842A1

公开(公告)日：2006-11-23

申请号：US11492291

申请日：2006-07-24

申请人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： G01R31/00

CPC分类号： G02F1/1362 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136254 ,  G09G3/006 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2330/08

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

公开(公告)号：US06982569B2

公开(公告)日：2006-01-03

申请号：US10705836

申请日：2003-11-13

申请人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： G01R31/00

CPC分类号： G02F1/1362 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136254 ,  G09G3/006 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2330/08

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

公开(公告)号：USRE41873E1

公开(公告)日：2010-10-26

申请号：US11648695

申请日：2006-12-29

申请人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： G02F1/1333

CPC分类号： G02F1/1345 ,  G02F1/1362 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136254

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

摘要翻译： 在绝缘基板上沿水平方向形成多条栅极线，在垂直方向形成与数据线连接的栅极短路棒，并在其上形成栅极绝缘膜。 在栅极绝缘膜上沿垂直方向形成与栅极线相交的多条数据线，并且在显示区域的外侧形成与数据线连接的数据短路条。 第一短路棒形成在栅极绝缘膜上，位于栅极线和栅极短路棒之间，并连接到奇数栅极线。 第二二次短路棒平行于第一短路棒形成并连接到偶数栅极线。

公开(公告)号：US08310262B2

公开(公告)日：2012-11-13

申请号：US12604356

申请日：2009-10-22

申请人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： G01R31/26

CPC分类号： G02F1/1362 ,  G02F2001/136254

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

摘要翻译： 在绝缘基板上沿水平方向形成多条栅极线，在垂直方向形成与数据线连接的栅极短路棒，并在其上形成栅极绝缘膜。 在栅极绝缘膜上沿垂直方向形成与栅极线相交的多条数据线，并且在显示区域的外侧形成与数据线连接的数据短路条。 第一短路棒形成在栅极绝缘膜上，位于栅极线和栅极短路棒之间，并连接到奇数栅极线。 第二二次短路棒平行于第一短路棒形成并连接到偶数栅极线。

公开(公告)号：US07626414B2

公开(公告)日：2009-12-01

申请号：US12250397

申请日：2008-10-13

申请人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

发明人： Sang-Kyoung Lee ,  Dong-Gyu Kim ,  Min-Hyung Moon

IPC分类号： G01R31/00

CPC分类号： G02F1/1362 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136254 ,  G09G3/006 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2330/08

摘要： A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

摘要翻译： 在绝缘基板上沿水平方向形成多条栅极线，在垂直方向形成与数据线连接的栅极短路棒，并在其上形成栅极绝缘膜。 在栅极绝缘膜上沿垂直方向形成与栅极线相交的多条数据线，并且在显示区域的外侧形成与数据线连接的数据短路条。 第一短路棒形成在栅极绝缘膜上，位于栅极线和栅极短路棒之间，并连接到奇数栅极线。 第二二次短路棒平行于第一短路棒形成并连接到偶数栅极线。