Non-volatile memory device and method of fabricating the same
    3.
    发明授权
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US08431983B2

    公开(公告)日:2013-04-30

    申请号:US12650367

    申请日:2009-12-30

    IPC分类号: H01L29/788

    摘要: A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate.

    摘要翻译: 提供了一种非易失性存储器件及其制造方法。 该方法可以包括在半导体衬底上设置隔离层。 隔离层可以从半导体衬底的主表面突出并限定有源区。 在由隔离层和有源区的突起限定的凹部中,可以依次形成扩散阻滞多晶型和浮栅。 控制栅极可以设置在隔离层上以覆盖扩散阻滞多晶型图案和浮动栅极。

    APPARATUS AND METHOD FOR PROVIDING HAPTIC FUNCTION IN PORTABLE TERMINAL
    4.
    发明申请
    APPARATUS AND METHOD FOR PROVIDING HAPTIC FUNCTION IN PORTABLE TERMINAL 有权
    便携式终端提供快乐功能的装置和方法

    公开(公告)号:US20110128134A1

    公开(公告)日:2011-06-02

    申请号:US12956320

    申请日:2010-11-30

    IPC分类号: G08B6/00

    CPC分类号: G08B6/00

    摘要: An apparatus and method for synchronizing a sound source and a vibration generated according to a user's touch input in order to implement a haptic function in a portable terminal are provided. The apparatus includes a response processor for synchronizing a time when a vibration is generated and a time when a sound source is generated by regulating a time when a vibration request signal is generated.

    摘要翻译: 提供了一种用于同步声源和根据用户的触摸输入生成的振动以便在便携式终端中实现触觉功能的装置和方法。 该装置包括响应处理器,用于使产生振动的时间和通过调节产生振动请求信号的时间来产生声源的时间同步。

    MULTIPLE TESTING BARS FOR TESTING LIQUID CRYSTAL DISPLAY AND METHOD THEREOF
    5.
    发明申请
    MULTIPLE TESTING BARS FOR TESTING LIQUID CRYSTAL DISPLAY AND METHOD THEREOF 有权
    用于测试液晶显示器的多个测试棒及其方法

    公开(公告)号:US20090039348A1

    公开(公告)日:2009-02-12

    申请号:US12250397

    申请日:2008-10-13

    IPC分类号: H01L23/58

    摘要: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

    摘要翻译: 在绝缘基板上沿水平方向形成多条栅极线,在垂直方向形成与数据线连接的栅极短路棒,并在其上形成栅极绝缘膜。 在栅极绝缘膜上沿垂直方向形成与栅极线相交的多条数据线,并且在显示区域的外侧形成与数据线连接的数据短路条。 第一短路棒形成在栅极绝缘膜上,位于栅极线和栅极短路棒之间,并连接到奇数栅极线。 第二二次短路棒平行于第一短路棒形成并连接到偶数栅极线。

    Nonvolatile memory device and method of manufacturing the same
    7.
    发明申请
    Nonvolatile memory device and method of manufacturing the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US20080090352A1

    公开(公告)日:2008-04-17

    申请号:US11653362

    申请日:2007-01-16

    IPC分类号: H01L21/336

    摘要: A method of manufacturing a nonvolatile memory device includes forming a plurality of device isolation regions in a semiconductor substrate, forming a tunneling insulation layer on the semiconductor substrate, forming a first preliminary polysilicon layer in communication with the tunneling insulation layer and the device isolation regions, forming a preliminary amorphous silicon layer on the first preliminary silicon layer, forming a second preliminary polysilicon layer on the preliminary amorphous silicon layer, and patterning the second preliminary polysilicon layer, the preliminary amorphous silicon layer, and the first preliminary polysilicon layer to form a floating gate layer.

    摘要翻译: 一种制造非易失性存储器件的方法包括在半导体衬底中形成多个器件隔离区域,在半导体衬底上形成隧道绝缘层,形成与隧道绝缘层和器件隔离区域连通的第一初步多晶硅层, 在所述第一初步硅层上形成初步非晶硅层,在所述初步非晶硅层上形成第二初步多晶硅层,以及构图所述第二初步多晶硅层,所述初步非晶硅层和所述第一初步多晶硅层,以形成浮 门层

    MULTIPLE TESTING BARS FOR TESTING LIQUID CRYSTAL DISPLAY AND METHOD THEREOF
    10.
    发明申请
    MULTIPLE TESTING BARS FOR TESTING LIQUID CRYSTAL DISPLAY AND METHOD THEREOF 有权
    用于测试液晶显示器的多个测试棒及其方法

    公开(公告)号:US20100039119A1

    公开(公告)日:2010-02-18

    申请号:US12604356

    申请日:2009-10-22

    IPC分类号: G01R31/04

    摘要: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.

    摘要翻译: 在绝缘基板上沿水平方向形成多条栅极线,在垂直方向形成与数据线连接的栅极短路棒,并在其上形成栅极绝缘膜。 在栅极绝缘膜上沿垂直方向形成与栅极线相交的多条数据线,并且在显示区域的外侧形成与数据线连接的数据短路条。 第一短路棒形成在栅极绝缘膜上,位于栅极线和栅极短路棒之间,并连接到奇数栅极线。 第二二次短路棒平行于第一短路棒形成并连接到偶数栅极线。