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    Background reads to condition programmed semiconductor memory cells
    1.
    发明授权
    Background reads to condition programmed semiconductor memory cells 有权

    公开(公告)号：US10521287B2

    公开(公告)日：2019-12-31

    申请号：US16153225

    申请日：2018-10-05

    Applicant: Seagate Technology LLC

    Inventor： Antoine Khoueir ,  Stacey Secatch ,  Kevin Gomez ,  Ryan Goss

    IPC: G11C16/26 ,  G06F11/07 ,  G11C16/16 ,  G11C16/34 ,  G06F11/10 ,  G11C11/56 ,  G06F12/02 ,  G11C16/04

    Abstract: Method and apparatus for managing data in a semiconductor memory, such as but not limited to a three dimensional (3D) NAND flash memory array. In some embodiments, the memory has non-volatile memory cells arranged into addressable blocks. Each memory cell is configured to store multiple bits. A program/read control circuit programs data sets to and reads data sets from the memory cells in the addressable blocks to service a sequence of host access commands. The circuit concurrently performs background reads in conjunction with the servicing of the host access commands. The background reads result in the reading of a different data set from each of the addressable blocks over each of a succession of time intervals of selected duration. The background reads condition the memory cells prior to a first read operation associated with the host access commands.

    Background reads to condition programmed semiconductor memory cells
    2.
    发明授权
    Background reads to condition programmed semiconductor memory cells 有权

    公开(公告)号：US10095568B2

    公开(公告)日：2018-10-09

    申请号：US15498595

    申请日：2017-04-27

    Applicant: Seagate Technology, LLC

    Inventor： Antoine Khoueir ,  Stacey Secatch ,  Kevin Gomez ,  Ryan Goss

    IPC: G11C16/04 ,  G06F11/07 ,  G11C16/16 ,  G11C16/34 ,  G11C16/26

    Abstract: Method and apparatus for managing data in a semiconductor memory, such as but not limited to a three dimensional (3D) NAND flash memory array. In some embodiments, the memory has non-volatile memory cells arranged into addressable blocks. Each memory cell is configured to store multiple bits. A program/read control circuit programs data sets to and reads data sets from the memory cells in the addressable blocks to service a sequence of host access commands. The circuit concurrently performs background reads in conjunction with the servicing of the host access commands. The background reads result in the reading of a different data set from each of the addressable blocks over each of a succession of time intervals of selected duration. The background reads condition the memory cells prior to a first read operation associated with the host access commands.

    BACKGROUND READS TO CONDITION PROGRAMMED SEMICONDUCTOR MEMORY CELLS
    4.
    发明申请
    BACKGROUND READS TO CONDITION PROGRAMMED SEMICONDUCTOR MEMORY CELLS 审中-公开

    公开(公告)号：US20180225164A1

    公开(公告)日：2018-08-09

    申请号：US15498595

    申请日：2017-04-27

    Applicant: Seagate Technology, LLC

    Inventor： Antoine Khoueir ,  Stacey Secatch ,  Kevin Gomez ,  Ryan Goss

    IPC: G06F11/07 ,  G11C16/16 ,  G11C16/34 ,  G11C16/26

    CPC classification number: G06F11/076 ,  G06F11/073 ,  G11C16/16 ,  G11C16/26 ,  G11C16/3459

    Abstract: Method and apparatus for managing data in a semiconductor memory, such as but not limited to a three dimensional (3D) NAND flash memory array. In some embodiments, the memory has non-volatile memory cells arranged into addressable blocks. Each memory cell is configured to store multiple bits. A program/read control circuit programs data sets to and reads data sets from the memory cells in the addressable blocks to service a sequence of host access commands. The circuit concurrently performs background reads in conjunction with the servicing of the host access commands. The background reads result in the reading of a different data set from each of the addressable blocks over each of a succession of time intervals of selected duration. The background reads condition the memory cells prior to a first read operation associated with the host access commands.

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