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1.
公开(公告)号:US08526224B2
公开(公告)日:2013-09-03
申请号:US13662813
申请日:2012-10-29
Applicant: Seagate Technology LLC
Inventor: Thomas William Clinton , Werner Scholz
IPC: G11C11/00
CPC classification number: G11C19/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , Y10S977/935
Abstract: A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.
Abstract translation: 公开了一种适用于自旋转矩随机存取存储器(ST-RAM)的复合磁数据存储单元。 磁数据存储单元包括磁存储元件和通信地连接到磁存储元件的两个端子。 响应于经由端子的自旋动量传递输入,磁存储元件被配置为产生对应于稳定磁性配置的至少三个不同的磁阻输出电平中的任何一个。
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公开(公告)号:US20130051135A1
公开(公告)日:2013-02-28
申请号:US13662813
申请日:2012-10-29
Applicant: SEAGATE TECHNOLOGY LLC
Inventor: Thomas William Clinton , Werner Scholz
IPC: G11C11/16
CPC classification number: G11C19/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , Y10S977/935
Abstract: A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.
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