公开(公告)号：US09390735B1

公开(公告)日：2016-07-12

申请号：US14675074

申请日：2015-03-31

Applicant: Seagate Technology LLC

Inventor： Zhiran Wang ,  Kevin A. McNeill ,  Robert Lamberton

IPC: G11B5/39

CPC classification number: G11B5/3912 ,  G11B5/3932 ,  G11B5/398

Abstract: A data reader may have a magnetoresistive stack positioned on an air bearing surface and consisting of at least a magnetically free structure that continuously extends from the air bearing surface with a first stripe height. A side shield can be separated from the magnetoresistive stack on the ABS and configured with a first magnetic layer having the first stripe height and a second magnetic layer having a third stripe height from the air bearing surface with the third stripe height being greater than the first stripe height. The side shield can be anti-ferromagnetically biased by a synthetic antiferromagnetic top shield structure that contacts the side shield through a transition metal material layer. The first stripe height can be configured to match a magnetically free layer of the magnetoresistive stack and the second stripe height can be configured to match a magnetically fixed layer of the magnetoresistive stack.

Abstract translation: 数据读取器可以具有位于空气轴承表面上并由至少一个无磁结构组成的磁阻堆叠，该结构从空气轴承表面以第一条纹高度连续延伸。 侧屏蔽可以与ABS上的磁阻堆叠分离，并配置有具有第一条带高度的第一磁性层和具有距空气支承表面的第三条带高度的第二磁性层，第三条纹高度大于第一条带高度 条纹高度。 侧屏蔽可以通过合成的反铁磁顶层屏蔽结构进行反铁磁偏置，该结构通过过渡金属材料层接触侧屏蔽。 可以将第一条纹高度配置成匹配磁阻堆叠的无磁层，并且可以将第二条纹高度配置成与磁阻堆叠的磁性固定层相匹配。

公开(公告)号：US10008223B1

公开(公告)日：2018-06-26

申请号：US15435561

申请日：2017-02-17

Applicant: Seagate Technology LLC

Inventor： Alexey Dobrynin ,  Zhiran Wang ,  Kevin McNeill ,  Denis O'Donnell ,  Sameh Hassan ,  Marcus Ormston ,  Robert William Lamberton

IPC: G11B5/39

CPC classification number: G11B5/3906 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/398 ,  G11B2005/3996

Abstract: A read sensor having a bearing surface and an antiferromagnetic (AFM) layer recessed from the bearing surface. The read sensor includes a synthetic antiferromagnetic (SAF) structure over the AFM layer. The SAF structure includes a recessed lower pinned layer, an upper pinned layer, a reference layer and a stabilization feature. The stabilization feature may include deliberate reduction of the antiferromagnetic coupling energy density between the upper pinned layer and the reference layer, so that it becomes lower than the first energy density of antiferromagnetic coupling between the upper pinned layer and the lower pinned layer. The stabilization feature may alternatively include an intermediate pinned layer between the lower pinned layer and the upper pinned layer. The intermediate pinned layer is antiferromagnetically coupled to both the lower pinned layer and the upper pinned layer, and at least a portion of the intermediate pinned layer is recessed behind the bearing surface.