公开(公告)号：US20240339255A1

公开(公告)日：2024-10-10

申请号：US18744960

申请日：2024-06-17

申请人： TDK CORPORATION

发明人： Kazuumi INUBUSHI ,  Tomoyuki SASAKI

IPC分类号： H01F10/32 ,  G01R33/09 ,  G11B5/39 ,  H03H1/00 ,  H03H7/06 ,  H10B61/00 ,  H10N52/85

CPC分类号： H01F10/329 ,  G01R33/091 ,  G01R33/093 ,  G01R33/098 ,  G11B5/39 ,  G11B2005/3996 ,  H03H2001/0057 ,  H03H7/06 ,  H10B61/00 ,  H10N52/85

摘要： This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.

公开(公告)号：US20240266099A1

公开(公告)日：2024-08-08

申请号：US18106683

申请日：2023-02-07

申请人： TDK CORPORATION

发明人： Kazuumi INUBUSHI ,  Tomoyuki SASAKI

IPC分类号： H01F10/32

CPC分类号： H01F10/329 ,  G01R33/091 ,  G01R33/093 ,  G01R33/098 ,  G11B5/39 ,  G11B2005/3996 ,  H03H2001/0057 ,  H03H7/06 ,  H10B61/00 ,  H10N52/85

摘要： This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.

公开(公告)号：US20230419990A1

公开(公告)日：2023-12-28

申请号：US18244555

申请日：2023-09-11

申请人： Western Digital Technologies, Inc.

发明人： Xiaoyong LIU ,  Zhanjie LI ,  Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Kuok San HO ,  Hisashi TAKANO

IPC分类号： G11B5/39 ,  G11B5/11

CPC分类号： G11B5/3909 ,  G11B5/3967 ,  G11B5/3912 ,  G11B5/11 ,  G11B5/3932 ,  G11B2005/3996

摘要： The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.

公开(公告)号：US20190006074A1

公开(公告)日：2019-01-03

申请号：US16020373

申请日：2018-06-27

申请人： TDK CORPORATION

发明人： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC分类号： H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  H01L43/10 ,  H03B15/00 ,  G11B5/39 ,  G01R33/09

CPC分类号： H01F10/3259 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/329 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  H03H2/00 ,  H03H11/04

摘要： There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.

公开(公告)号：US20180158475A1

公开(公告)日：2018-06-07

申请号：US15886032

申请日：2018-02-01

申请人： Allegro MicroSystems, LLC

发明人： Paolo Campiglio ,  Bryan Cadugan ,  Claude Fermon ,  Rémy Lassalle-Balier

IPC分类号： G11B5/39 ,  G01R33/09 ,  H01L43/10 ,  G01R33/00 ,  H01F10/32 ,  H01L43/08 ,  H01F41/30 ,  H01L43/12 ,  H01L43/02

CPC分类号： G11B5/3932 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/306 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

公开(公告)号：US20180068681A1

公开(公告)日：2018-03-08

申请号：US15554410

申请日：2016-03-28

申请人： TDK CORPORATION

发明人： Tomoyuki SASAKI

IPC分类号： G11B5/39 ,  G11C11/16 ,  H01F10/193 ,  H01L27/22

CPC分类号： G11B5/3909 ,  G11B5/39 ,  G11B2005/3996 ,  G11C11/161 ,  H01F1/405 ,  H01F10/1936 ,  H01L27/105 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

公开(公告)号：US09911440B2

公开(公告)日：2018-03-06

申请号：US15215487

申请日：2016-07-20

申请人： International Business Machines Corporation

发明人： Robert G. Biskeborn ,  Peter VanderSalm Koeppe ,  Calvin S. Lo

IPC分类号： G11B5/39 ,  G11B5/40 ,  G11B5/008

CPC分类号： G11B5/3948 ,  G11B5/00821 ,  G11B5/3909 ,  G11B5/3945 ,  G11B5/3951 ,  G11B5/3958 ,  G11B5/3977 ,  G11B5/40 ,  G11B2005/3996

摘要： An apparatus according to one embodiment includes a magnetic head having multiple magnetic transducers, the transducers including read sensors. The read sensors are of at least two differing types selected from a group consisting of tunneling magnetoresistance (TMR), giant magnetoresistance (GMR), anisotropic magnetoresistance (AMR), and inductive sensors.

公开(公告)号：US09825155B2

公开(公告)日：2017-11-21

申请号：US15038281

申请日：2014-11-19

申请人： TDK CORPORATION

发明人： Tomoyuki Sasaki ,  Tohru Oikawa

IPC分类号： H01L29/66 ,  G01R33/09 ,  H01L29/82 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L29/08 ,  G11B5/39

CPC分类号： H01L29/66984 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/161 ,  H01L29/0843 ,  H01L29/0895 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

摘要： The magnetoresistive element includes a semiconductor channel layer, a pinned layer disposed on the semiconductor channel layer via a first tunnel layer, a free layer disposed on the semiconductor channel layer via a second tunnel layer, wherein the semiconductor channel layer includes a first region containing an interface with the first tunnel layer, a second region containing an interface with the second tunnel layer, and a third region, impurity concentrations in the first and second regions are higher than 1×1019 cm−3, an impurity concentration in the third region is 1×1019 cm−3 or less, the first and second regions are separated by the third region, and the impurity concentrations in the first and second regions decrease in the thickness direction of the semiconductor channel layer from the interface between the semiconductor channel layer and the first tunnel layer and the interface between the semiconductor channel layer and the second tunnel layer.

公开(公告)号：US20170263273A1

公开(公告)日：2017-09-14

申请号：US15068476

申请日：2016-03-11

申请人： HGST Netherlands B.V.

发明人： Takahiro Ibusuki ,  Kouji Kataoka ,  Takashi Wagatsuma ,  Norihiro Okawa ,  Yukimasa Okada

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996

摘要： A magnetic read element having an additional magnetic layer, “a floating magnetic shield”, formed as a part of a capping structure of a magnetoresistive element. The capping structure is formed over the magnetic free layer and includes a magnetic layer that is located between first and second non-magnetic layers. The magnetic layer can advantageously he formed with a high magnetic permeability for increased signal amplitude and increased signal resolution. In addition, because the magnetic layer of the capping layer structure acts as a magnetic shield, it can reduce effective magnetic gap spacing for increased signal resolution.

公开(公告)号：US20170249959A1

公开(公告)日：2017-08-31

申请号：US15597342

申请日：2017-05-17

申请人： WESTERN DIGITAL (FREMONT), LLC

发明人： GERARDO A. BERTERO ,  Shaoping LI ,  Qunwen LENG ,  YUANKAI ZHENG ,  Rongfu XIAO ,  MING MAO ,  SHIHAI HE ,  Miaoyin WANG

IPC分类号： G11B5/39 ,  G11B5/115

CPC分类号： G11B5/3912 ,  G11B5/115 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/398 ,  G11B2005/3996

摘要： A magnetic read apparatus includes a read sensor, a shield structure and a side magnetic bias structure. The read sensor includes a free layer having a side and a nonmagnetic spacer layer. The shield structure includes a shield pinning structure and a shield reference structure. The nonmagnetic spacer layer is between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment in a first direction. The shield reference structure includes a shield reference structure magnetic moment weakly coupled with the pinned magnetic moment. The side magnetic bias structure is adjacent to the side of the free layer.