公开(公告)号：US20120008895A1

公开(公告)日：2012-01-12

申请号：US13108176

申请日：2011-05-16

申请人： Seiji SUMI ,  Shigenori HAYAKAWA ,  Kaoru OKAMOTO ,  Shunya YAMAUCHI ,  Yasushi SAKUMA

发明人： Seiji SUMI ,  Shigenori HAYAKAWA ,  Kaoru OKAMOTO ,  Shunya YAMAUCHI ,  Yasushi SAKUMA

IPC分类号： G02F1/035

CPC分类号： G02F1/017 ,  B82Y20/00

摘要： Provided is a semiconductor optical device, which has a buried heterostructure structure and is formed in a structure capable of reducing a parasitic capacitance to further improve characteristics thereof, and also provided are an optical transmitter module, an optical transceiver module, and an optical transmission equipment. The semiconductor optical device includes a modulator portion for modulating light input along an emitting direction and radiating the modulated light, the modulator portion including: a mesa-stripe structure, which includes an active layer and extends in the emitting direction; and a buried layer provided adjacent to each side of the mesa-stripe structure, in which a distance between a lower surface of the buried layer and a lower surface of the active layer is 20% or more of a distance between the lower surface and an upper surface of the buried layer.

摘要翻译： 提供一种半导体光学器件，其具有掩埋异质结构结构，并且形成为能够降低寄生电容以进一步提高其特性的结构，并且还提供了一种光发射器模块，光收发器模块和光传输设备 。 半导体光学器件包括用于调制沿着发射方向输入的光并调制光的调制器部分，所述调制器部分包括：台面条状结构，其包括有源层并沿发射方向延伸; 以及与所述台面条状结构的每一侧相邻设置的掩埋层，其中所述掩埋层的下表面与所述有源层的下表面之间的距离为所述下表面和所述有源层的下表面之间的距离的20％ 埋层的上表面。