专利检索 ap:("Semiconductor Manufacturing International (Shanghai) Corporation" OR "Semiconductor Manufacturing International (Beijing) Corporation") AND inv:"Shuaijie CHI" 第 1 页

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发明申请
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF 有权

公开(公告)号：US20210358912A1

公开(公告)日：2021-11-18

申请号：US17322472

申请日：2021-05-17

申请人： Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation

发明人： Shuaijie CHI , Haiyang ZHANG , Ermin CHONG , Wei TIAN

IPC分类号： H01L27/092 , H01L29/66 , H01L29/06 , H01L21/8234

摘要： Semiconductor structures and fabrication methods thereof are provided. The semiconductor includes a substrate; a gate structure on the substrate; and a dielectric layer on the substrate and covering sidewall surfaces of the gate structure. The dielectric layer includes an opening passing through the gate structure along a direction perpendicular to an extending direction of the gate structure. The semiconductor structure also includes a first isolation layer in the opening and with a top surface lower than a top surface of the gate structure.