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1.发明申请Proportional to absolute temperature current generation circuit having higher temperature coefficient, display device including the same, and method thereof 有权与具有较高温度系数的绝对温度电流产生电路的比例，包括其的显示装置及其方法公开(公告)号：US20080284493A1
公开(公告)日：2008-11-20
申请号：US12149808
申请日：2008-05-08
申请人： Seung Hwan Baek , Chang Hwe Choi , Hyung Tae Kim
发明人： Seung Hwan Baek , Chang Hwe Choi , Hyung Tae Kim
IPC分类号： H03K3/42
CPC分类号： G05F3/30
摘要： A proportional to absolute temperature (PTAT) current generation circuit may include a current mirror unit and/or a level control unit. The current mirror unit may be connected between a first power supply voltage, a first node, and/or a second node. The level control unit may be connected between the first node, the second node, and/or a second power supply voltage. The level control unit may be configured to control a level of an output current of the current mirror unit based on a voltage level of the first node and a voltage level of the second node. The level control unit may include a first transistor connected between the first node and the second power supply voltage, at least one second transistor connected between the second node and a third node, the at least one second transistor configured to operate in a weak inversion region, and/or a third transistor connected between the third node and the second power supply voltage.
摘要翻译： 与绝对温度（PTAT）电流产生电路成正比可以包括电流镜单元和/或电平控制单元。 电流镜单元可以连接在第一电源电压，第一节点和/或第二节点之间。 电平控制单元可以连接在第一节点，第二节点和/或第二电源电压之间。 电平控制单元可以被配置为基于第一节点的电压电平和第二节点的电压电平来控制电流镜单元的输出电流的电平。 电平控制单元可以包括连接在第一节点和第二电源电压之间的第一晶体管，连接在第二节点和第三节点之间的至少一个第二晶体管，所述至少一个第二晶体管被配置为在弱反转区域 ，和/或连接在第三节点和第二电源电压之间的第三晶体管。
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2.发明授权Proportional to absolute temperature current generation circuit having higher temperature coefficient, display device including the same, and method thereof 有权与具有较高温度系数的绝对温度电流产生电路的比例，包括其的显示装置及其方法公开(公告)号：US08994444B2
公开(公告)日：2015-03-31
申请号：US12149808
申请日：2008-05-08
申请人： Seung Hwan Baek , Chang Hwe Choi , Hyung Tae Kim
发明人： Seung Hwan Baek , Chang Hwe Choi , Hyung Tae Kim
CPC分类号： G05F3/30
摘要： A proportional to absolute temperature (PTAT) current generation circuit may include a current mirror unit and/or a level control unit. The current mirror unit may be connected between a first power supply voltage, a first node, and/or a second node. The level control unit may be connected between the first node, the second node, and/or a second power supply voltage. The level control unit may be configured to control a level of an output current of the current mirror unit based on a voltage level of the first node and a voltage level of the second node. The level control unit may include a first transistor connected between the first node and the second power supply voltage, at least one second transistor connected between the second node and a third node, the at least one second transistor configured to operate in a weak inversion region, and/or a third transistor connected between the third node and the second power supply voltage.
摘要翻译： 与绝对温度（PTAT）电流产生电路成正比可以包括电流镜单元和/或电平控制单元。 电流镜单元可以连接在第一电源电压，第一节点和/或第二节点之间。 电平控制单元可以连接在第一节点，第二节点和/或第二电源电压之间。 电平控制单元可以被配置为基于第一节点的电压电平和第二节点的电压电平来控制电流镜单元的输出电流的电平。 电平控制单元可以包括连接在第一节点和第二电源电压之间的第一晶体管，连接在第二节点和第三节点之间的至少一个第二晶体管，所述至少一个第二晶体管被配置为在弱反转区域 ，和/或连接在第三节点和第二电源电压之间的第三晶体管。
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