公开(公告)号：US10181354B2

公开(公告)日：2019-01-15

申请号：US15690159

申请日：2017-08-29

Applicant: Silicon Storage Technology, Inc.

Inventor： Bin Sheng ,  Yao Zhou ,  Tao Wang ,  Xiaozhou Qian ,  Lu Guo ,  Ning Bai

IPC: G11C16/08 ,  G11C16/28 ,  G11C16/04

Abstract: The present invention relates to an improved sense amplifier for reading values in flash memory cells in an array. In one embodiment, a sense amplifier comprises an improved pre-charge circuit for pre-charging a bit line during a pre-charge period to increase the speed of read operations. In another embodiment, a sense amplifier comprises simplified address decoding circuitry to increase the speed of read operations.

公开(公告)号：US20180075914A1

公开(公告)日：2018-03-15

申请号：US15690159

申请日：2017-08-29

Applicant: Silicon Storage Technology, Inc.

Inventor： Bin Sheng ,  Yao Zhou ,  Tao Wang ,  Xiaozhou Qian ,  Lu Guo ,  Ning Bai

IPC: G11C16/28

CPC classification number: G11C16/28 ,  G11C16/0425 ,  G11C16/08

Abstract: The present invention relates to an improved sense amplifier for reading values in flash memory cells in an array. In one embodiment, a sense amplifier comprises an improved pre-charge circuit for pre-charging a bit line during a pre-charge period to increase the speed of read operations. In another embodiment, a sense amplifier comprises simplified address decoding circuitry to increase the speed of read operations.