公开(公告)号：US20140293724A1

公开(公告)日：2014-10-02

申请号：US14229763

申请日：2014-03-28

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van TRAN ,  Samar SAHA

IPC: G11C7/06

CPC classification number: G11C7/065 ,  G11C7/06 ,  G11C7/062 ,  G11C16/28 ,  H01L21/28282 ,  H01L21/823412 ,  H01L21/823807 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66833 ,  H01L29/7835 ,  H01L29/792

Abstract: Systems and methods are disclosed for providing selective threshold voltage characteristics via use of MOS transistors having differential threshold voltages. In one exemplary embodiment, there is provided a metal oxide semiconductor device comprising a substrate of semiconductor material having a source region, a drain region and a channel region therebetween, an insulating layer over the channel region, and a gate portion of the insulating layer. Moreover, with regard to the device, the shape of the insulating layer and/or the shape or implantation of a junction region are of varied dimension as between the gate-to-drain and gate-to-source junctions to provide differential threshold voltages between them.

Abstract translation: 公开了用于通过使用具有差分阈值电压的MOS晶体管来提供选择性阈值电压特性的系统和方法。 在一个示例性实施例中，提供了一种金属氧化物半导体器件，其包括半导体材料的衬底，其具有源极区，漏极区和它们之间的沟道区，沟道区上方的绝缘层和绝缘层的栅极部。 此外，关于器件，绝缘层的形状和/或接合区域的形状或注入在栅极 - 漏极和栅极 - 源极结之间具有不同的尺寸，以提供不同的阈值电压 他们。