公开(公告)号：US20230025429A1

公开(公告)日：2023-01-26

申请号：US17757822

申请日：2021-01-07

Applicant: Soitec

Inventor： Aymen Ghorbel ,  Frédéric Allibert ,  Damien Massy ,  Isabelle Bertrand ,  Lamia Nouri

IPC: H01L21/761 ,  H01L21/762

Abstract: The invention relates to a method for manufacturing a semiconductor-on-insulator structure (10), comprising the following steps: —providing an FD-SOI substrate (1) comprising, successively from its base to its top: a monocrystalline substrate (2) having an electrical resistivity of between 500 Ω·cm and 30 kΩ·cm, an interstitial oxygen content (Oi) of between 20 and 40 old ppma, and having an N- or P-type doping, an electrically insulating layer (3) having a thickness of between 20 nm and 400 nm, a monocrystalline layer (4) having a P-type doping, —heat-treating the FD-SOI substrate (1) at a temperature greater than or equal to 1175° C. for a time greater than or equal to 1 hour in order to form a P-N junction (5) in the substrate. The invention also relates to such a semiconductor-on-insulator structure.