公开(公告)号：US20220059603A1

公开(公告)日：2022-02-24

申请号：US17418148

申请日：2019-12-23

申请人： Soitec

发明人： Walter Schwarzenbach ,  Ludovic Ecarnot ,  Damien Massy ,  Nadia Ben Mohamed ,  Nicolas Daval ,  Christophe Girard ,  Christophe Maleville

IPC分类号： H01L27/146 ,  H01L31/18

摘要： A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.

公开(公告)号：US11670540B2

公开(公告)日：2023-06-06

申请号：US17190004

申请日：2021-03-02

申请人： Soitec ,  COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

发明人： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frédéric Mazen ,  Damien Massy ,  Shay Reboh ,  François Rieutord

IPC分类号： H01L21/762 ,  H01L21/324 ,  H01L21/263

CPC分类号： H01L21/76254 ,  H01L21/263 ,  H01L21/324 ,  H01L21/76251

摘要： Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area of the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

公开(公告)号：US20230025429A1

公开(公告)日：2023-01-26

申请号：US17757822

申请日：2021-01-07

申请人： Soitec

发明人： Aymen Ghorbel ,  Frédéric Allibert ,  Damien Massy ,  Isabelle Bertrand ,  Lamia Nouri

IPC分类号： H01L21/761 ,  H01L21/762

摘要： The invention relates to a method for manufacturing a semiconductor-on-insulator structure (10), comprising the following steps: —providing an FD-SOI substrate (1) comprising, successively from its base to its top: a monocrystalline substrate (2) having an electrical resistivity of between 500 Ω·cm and 30 kΩ·cm, an interstitial oxygen content (Oi) of between 20 and 40 old ppma, and having an N- or P-type doping, an electrically insulating layer (3) having a thickness of between 20 nm and 400 nm, a monocrystalline layer (4) having a P-type doping, —heat-treating the FD-SOI substrate (1) at a temperature greater than or equal to 1175° C. for a time greater than or equal to 1 hour in order to form a P-N junction (5) in the substrate. The invention also relates to such a semiconductor-on-insulator structure.

公开(公告)号：US12100727B2

公开(公告)日：2024-09-24

申请号：US17418148

申请日：2019-12-23

申请人： Soitec

发明人： Walter Schwarzenbach ,  Ludovic Ecarnot ,  Damien Massy ,  Nadia Ben Mohamed ,  Nicolas Daval ,  Christophe Girard ,  Christophe Maleville

IPC分类号： H01L27/146 ,  H01L21/265 ,  H01L21/322 ,  H01L21/762 ,  H01L31/18

CPC分类号： H01L27/14683 ,  H01L21/26506 ,  H01L21/3223 ,  H01L21/3226 ,  H01L21/76254 ,  H01L27/1463 ,  H01L31/1892

摘要： A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.

公开(公告)号：US09589830B2

公开(公告)日：2017-03-07

申请号：US14686229

申请日：2015-04-14

申请人： Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

发明人： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Damien Massy ,  Frederic Mazen ,  Francois Rieutord

IPC分类号： H01L21/762 ,  H01L21/683

CPC分类号： H01L21/76254 ,  H01L21/6835 ,  H01L2221/68363 ,  H01L2221/68381

摘要： A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

摘要翻译： 用于将有用层转移到载体上的方法包括以下过程：通过将光物质注入到第一基底中形成脆性平面，以便在该平面和第一基底的表面之间形成有用层 ; 将支撑件施加到第一基板的表面上以形成具有两个暴露侧面的要断裂的组件; 热破碎处理组件要断裂; 以及沿着脆化平面在第一衬底中的断裂波的引发和自持续传播。 待破裂的组件的至少一个侧面在接触区域上紧密接触，其中吸收单元适于捕获和消散在断裂波的起始和/或传播期间发射的声振动。

公开(公告)号：US20210202302A1

公开(公告)日：2021-07-01

申请号：US17190004

申请日：2021-03-02

申请人： Soitec ,  COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

发明人： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frédéric Mazen ,  Damien Massy ,  Shay Reboh ,  François Rieutord

IPC分类号： H01L21/762 ,  H01L21/324 ,  H01L21/263

摘要： Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

公开(公告)号：US10950491B2

公开(公告)日：2021-03-16

申请号：US16324461

申请日：2017-08-01

申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives ,  Soitec

发明人： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frederic Mazen ,  Damien Massy ,  Shay Reboh ,  Francois Rieutord

IPC分类号： H01L21/762 ,  H01L21/324 ,  H01L21/263

摘要： A useful layer is layered onto a support by a method that includes the steps of forming an embrittlement plane by implanting light elements into a first substrate, so as to form a useful layer between such plane and one surface of the first substrate; applying the support onto the surface of the first substrate so as to form an assembly to be fractured; applying a heat treatment for embrittling the assembly to be fractured; and initiating and propagating a fracture wave into the first substrate along the embrittlement plane. The fracture wave is initiated in a central area of the embrittlement plane and the propagation speed of the wave is controlled so that the velocity thereof is sufficient to cause the interactions of the fracture wave with acoustic vibrations emitted upon the initiation and/or propagation thereof, if any, are confined to a peripheral area of the useful layer.

公开(公告)号：US20150303098A1

公开(公告)日：2015-10-22

申请号：US14686229

申请日：2015-04-14

申请人： Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

发明人： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Damien Massy ,  Frederic Mazen ,  Francois Rieutord

IPC分类号： H01L21/762 ,  H01L21/683

CPC分类号： H01L21/76254 ,  H01L21/6835 ,  H01L2221/68363 ,  H01L2221/68381

摘要： A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

摘要翻译： 用于将有用层转移到载体上的方法包括以下过程：通过将光物质注入到第一基底中形成脆性平面，以便在该平面和第一基底的表面之间形成有用层 ; 将支撑件施加到第一基板的表面上以形成具有两个暴露侧面的要断裂的组件; 热破碎处理组件要断裂; 以及沿着脆化平面在第一衬底中的断裂波的引发和自持续传播。 待破裂的组件的至少一个侧面在接触区域上紧密接触，其中吸收单元适于捕获和消散在断裂波的起始和/或传播期间发射的声振动。