公开(公告)号：US09583531B2

公开(公告)日：2017-02-28

申请号：US14899243

申请日：2014-06-16

Applicant: Soitec

Inventor： Marcel Broekaart ,  Laurent Marinier

IPC: H01L21/00 ,  H01L27/146 ,  H01L21/78 ,  H01L25/00 ,  H01L21/683

CPC classification number: H01L27/14687 ,  H01L21/6835 ,  H01L21/78 ,  H01L25/50 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/68363 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for transferring a buried circuit layer comprises taking a donor substrate comprising an internal etch stop zone and covered on its front side with a circuit layer, producing over the entire circumference of the donor substrate either a peripheral trench or a peripheral routing, the routing or trench being produced over a depth such that they pass entirely through the circuit layer and extend into the donor substrate, depositing on the circuit layer and on the routed side or on the walls of the trench a layer of an etch stop material that is selective with respect to etching of the circuit layer, without filling the trench, bonding a receiver substrate to the donor substrate, and thinning the donor substrate by etching its back side until reaching the etch stop zone so as to obtain the transfer of the buried circuit layer to the receiver substrate.

Abstract translation: 用于传送掩埋电路层的工艺包括取得包含内部蚀刻停止区的施主衬底，并在其前侧覆盖有电路层，在施主衬底的整个圆周上产生外围沟槽或外围路由，布线 或沟槽在深度上产生，使得它们完全通过电路层并延伸到施主衬底中，在电路层上和在沟道侧或沟槽的壁上沉积有选择性的蚀刻停止材料层 关于电路层的蚀刻，而不填充沟槽，将接收器衬底接合到施主衬底，并且通过蚀刻其背面直到到达蚀刻停止区来稀释施主衬底，以获得掩埋电路层的传输 到接收器基板。